Low-Temperature Processing of Ferroelectric Layer-Structured Perovskite Thin Films by Using an Alkoxide Complex

K. Kato, Y. Torii, C. Zheng, J. M. Finder, R. H. Barz, Sandwip Dey

Research output: Contribution to journalArticle

Abstract

The alkoxy-derived thin films on Pt-passivated silicon substrates crystallized to single-phase perovskite SBT at temperatures below 550°C. The crystalline perfection improved and the crystallite size increased with temperatures up to 700°C. The adhesion, crystallinity, and microstructure of the Pt bottom electrodes were found to affect the cristallographic orientation of the SBT thin films. The SBT thin film showing higher degrees of (115) or (020)/(200) orientations, exhibited improved ferroelectric and fatigue properties.

Original languageEnglish (US)
Pages (from-to)189-196
Number of pages8
JournalKey Engineering Materials
Volume157-158
StatePublished - Dec 1 1999

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ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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