We report rapid low-temperature (300-470 °C) growth of Si0.50 Ge0.50, Si0.33 Ge0.67, Si0.25 Ge0.75, and Si0.20 Ge0.80 alloys on Si(100) using heavy single-source hydride molecular compounds (H3 Ge)n Si H4-n (n=1-4). Incorporation of the entire SiGe, Si Ge2, Si Ge3, and Si Ge4 framework of these precursors into the film provides precise control of morphology, composition, and strain. Low-energy electron microscopy analysis indicates that the (H3 Ge)x Si H4-x (x=2-4) species are highly reactive, with H2 desorption characteristics comparable to those of Ge2 H6, despite the presence of strong Si-H bonds in their molecular structure.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)