Low-temperature pathways to Ge-rich Si 1-x Ge x alloys via single-source hydride chemistry

C. W. Hu, Jose Menendez, I. S T Tsong, J. Tolle, Andrew Chizmeshya, Cole Ritter, John Kouvetakis

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We report rapid low-temperature (300-470 °C) growth of Si0.50 Ge0.50, Si0.33 Ge0.67, Si0.25 Ge0.75, and Si0.20 Ge0.80 alloys on Si(100) using heavy single-source hydride molecular compounds (H3 Ge)n Si H4-n (n=1-4). Incorporation of the entire SiGe, Si Ge2, Si Ge3, and Si Ge4 framework of these precursors into the film provides precise control of morphology, composition, and strain. Low-energy electron microscopy analysis indicates that the (H3 Ge)x Si H4-x (x=2-4) species are highly reactive, with H2 desorption characteristics comparable to those of Ge2 H6, despite the presence of strong Si-H bonds in their molecular structure.

Original languageEnglish (US)
Article number181903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number18
DOIs
StatePublished - Oct 31 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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