Low-temperature pathways to Ge-rich Si 1-x Ge x alloys via single-source hydride chemistry

C. W. Hu; Jose Menendez; I. S T Tsong; J. Tolle; Andrew Chizmeshya; Cole Ritter; John Kouvetakis

doi:10.1063/1.2117620

Low-temperature pathways to Ge-rich Si _1-x Ge _x alloys via single-source hydride chemistry

C. W. Hu, Jose Menendez, I. S T Tsong, J. Tolle, Andrew Chizmeshya, Cole Ritter, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

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Abstract

We report rapid low-temperature (300-470 °C) growth of Si0.50 Ge0.50, Si0.33 Ge0.67, Si0.25 Ge0.75, and Si0.20 Ge0.80 alloys on Si(100) using heavy single-source hydride molecular compounds (H3 Ge)n Si H4-n (n=1-4). Incorporation of the entire SiGe, Si Ge2, Si Ge3, and Si Ge4 framework of these precursors into the film provides precise control of morphology, composition, and strain. Low-energy electron microscopy analysis indicates that the (H3 Ge)x Si H4-x (x=2-4) species are highly reactive, with H2 desorption characteristics comparable to those of Ge2 H6, despite the presence of strong Si-H bonds in their molecular structure.

Original language	English (US)
Article number	181903
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	18
DOIs	https://doi.org/10.1063/1.2117620
State	Published - Oct 31 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2117620

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title = "Low-temperature pathways to Ge-rich Si 1-x Ge x alloys via single-source hydride chemistry",

abstract = "We report rapid low-temperature (300-470 °C) growth of Si0.50 Ge0.50, Si0.33 Ge0.67, Si0.25 Ge0.75, and Si0.20 Ge0.80 alloys on Si(100) using heavy single-source hydride molecular compounds (H3 Ge)n Si H4-n (n=1-4). Incorporation of the entire SiGe, Si Ge2, Si Ge3, and Si Ge4 framework of these precursors into the film provides precise control of morphology, composition, and strain. Low-energy electron microscopy analysis indicates that the (H3 Ge)x Si H4-x (x=2-4) species are highly reactive, with H2 desorption characteristics comparable to those of Ge2 H6, despite the presence of strong Si-H bonds in their molecular structure.",

author = "Hu, {C. W.} and Jose Menendez and Tsong, {I. S T} and J. Tolle and Andrew Chizmeshya and Cole Ritter and John Kouvetakis",

note = "Funding Information: This work was supported by the NSF (Grant Nos. DMR-0221993 and DMR-0303237) and the Intel Corporation.",

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doi = "10.1063/1.2117620",

language = "English (US)",

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T1 - Low-temperature pathways to Ge-rich Si 1-x Ge x alloys via single-source hydride chemistry

AU - Hu, C. W.

AU - Menendez, Jose

AU - Tsong, I. S T

AU - Tolle, J.

AU - Chizmeshya, Andrew

AU - Ritter, Cole

AU - Kouvetakis, John

N1 - Funding Information: This work was supported by the NSF (Grant Nos. DMR-0221993 and DMR-0303237) and the Intel Corporation.

PY - 2005/10/31

Y1 - 2005/10/31

N2 - We report rapid low-temperature (300-470 °C) growth of Si0.50 Ge0.50, Si0.33 Ge0.67, Si0.25 Ge0.75, and Si0.20 Ge0.80 alloys on Si(100) using heavy single-source hydride molecular compounds (H3 Ge)n Si H4-n (n=1-4). Incorporation of the entire SiGe, Si Ge2, Si Ge3, and Si Ge4 framework of these precursors into the film provides precise control of morphology, composition, and strain. Low-energy electron microscopy analysis indicates that the (H3 Ge)x Si H4-x (x=2-4) species are highly reactive, with H2 desorption characteristics comparable to those of Ge2 H6, despite the presence of strong Si-H bonds in their molecular structure.

AB - We report rapid low-temperature (300-470 °C) growth of Si0.50 Ge0.50, Si0.33 Ge0.67, Si0.25 Ge0.75, and Si0.20 Ge0.80 alloys on Si(100) using heavy single-source hydride molecular compounds (H3 Ge)n Si H4-n (n=1-4). Incorporation of the entire SiGe, Si Ge2, Si Ge3, and Si Ge4 framework of these precursors into the film provides precise control of morphology, composition, and strain. Low-energy electron microscopy analysis indicates that the (H3 Ge)x Si H4-x (x=2-4) species are highly reactive, with H2 desorption characteristics comparable to those of Ge2 H6, despite the presence of strong Si-H bonds in their molecular structure.

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JF - Applied Physics Letters

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Low-temperature pathways to Ge-rich Si _1-x Ge _x alloys via single-source hydride chemistry

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