Abstract
Silicon oxide films (> 1μm) were grown at room-temperature after low-energy copper-ion implantation of Si(100) substrates. The structural properties of the silicon oxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiO x interface. This study revealed that the oxide growth rate was dependent on the amount of Cu present at the moving interface. The resulting oxide formed was approximately stoichiometric silicon dioxide.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 189-193 |
| Number of pages | 5 |
| Volume | 398 |
| State | Published - 1996 |
| Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995 |
Other
| Other | Proceedings of the 1995 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 11/27/95 → 12/1/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials