Low temperature oxidation of silicon after copper ion implantation

E. J. Jaquez, Terry Alford, N. D. Theodore, D. Adams, Jian Li, S. W. Russell, Simone Anders

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Silicon oxide films (> 1μm) were grown at room-temperature after low-energy copper-ion implantation of Si(100) substrates. The structural properties of the silicon oxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiO x interface. This study revealed that the oxide growth rate was dependent on the amount of Cu present at the moving interface. The resulting oxide formed was approximately stoichiometric silicon dioxide.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages189-193
Number of pages5
Volume398
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/27/9512/1/95

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jaquez, E. J., Alford, T., Theodore, N. D., Adams, D., Li, J., Russell, S. W., & Anders, S. (1996). Low temperature oxidation of silicon after copper ion implantation. In Materials Research Society Symposium - Proceedings (Vol. 398, pp. 189-193). Materials Research Society.