Low temperature magnetoresistance of GaAs/AlGaAs corrugated-gate wires

A. W. Widjaja, N. Sasaki, K. Yamamoto, Y. Ochiai, K. Ishibashi, J. P. Bird, Y. Aoyagi, T. Sugano, D. K. Ferry

Research output: Contribution to journalArticle

6 Scopus citations


We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.

Original languageEnglish (US)
Pages (from-to)316-322
Number of pages7
JournalSuperlattices and Microstructures
Issue number3
Publication statusPublished - Oct 1996


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Widjaja, A. W., Sasaki, N., Yamamoto, K., Ochiai, Y., Ishibashi, K., Bird, J. P., ... Ferry, D. K. (1996). Low temperature magnetoresistance of GaAs/AlGaAs corrugated-gate wires. Superlattices and Microstructures, 20(3), 316-322.