Low temperature magnetoresistance of GaAs/AlGaAs corrugated-gate wires

A. W. Widjaja; N. Sasaki; K. Yamamoto; Y. Ochiai; K. Ishibashi; J. P. Bird; Y. Aoyagi; T. Sugano; D. K. Ferry

doi:10.1006/spmi.1996.0083

Low temperature magnetoresistance of GaAs/AlGaAs corrugated-gate wires

A. W. Widjaja, N. Sasaki, K. Yamamoto, Y. Ochiai, K. Ishibashi, J. P. Bird, Y. Aoyagi, T. Sugano, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.

Original language	English (US)
Pages (from-to)	317-322
Number of pages	6
Journal	Superlattices and Microstructures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1006/spmi.1996.0083
State	Published - Oct 1996

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1006/spmi.1996.0083

Cite this

@article{0db8c6615b4d40d2b7ff0a7a2fe0650e,

title = "Low temperature magnetoresistance of GaAs/AlGaAs corrugated-gate wires",

abstract = "We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.",

author = "Widjaja, {A. W.} and N. Sasaki and K. Yamamoto and Y. Ochiai and K. Ishibashi and Bird, {J. P.} and Y. Aoyagi and T. Sugano and Ferry, {D. K.}",

note = "Funding Information: Acknowledgements—The authors are grateful to A. Grincwajg for providing the results of her calculations prior to publication and for helpful discussions. Also, the financial support of the Ministry of Education, Science, and Culture (Japan), through a grant in aid for scientific research on the priority area {\textquoteleft}Quantum Coherent Electronics{\textquoteright}, is acknowledged.",

year = "1996",

month = oct,

doi = "10.1006/spmi.1996.0083",

language = "English (US)",

volume = "20",

pages = "317--322",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "3",

}

TY - JOUR

T1 - Low temperature magnetoresistance of GaAs/AlGaAs corrugated-gate wires

AU - Widjaja, A. W.

AU - Sasaki, N.

AU - Yamamoto, K.

AU - Ochiai, Y.

AU - Ishibashi, K.

AU - Bird, J. P.

AU - Aoyagi, Y.

AU - Sugano, T.

AU - Ferry, D. K.

N1 - Funding Information: Acknowledgements—The authors are grateful to A. Grincwajg for providing the results of her calculations prior to publication and for helpful discussions. Also, the financial support of the Ministry of Education, Science, and Culture (Japan), through a grant in aid for scientific research on the priority area ‘Quantum Coherent Electronics’, is acknowledged.

PY - 1996/10

Y1 - 1996/10

N2 - We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.

AB - We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.

UR - http://www.scopus.com/inward/record.url?scp=0029765336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029765336&partnerID=8YFLogxK

U2 - 10.1006/spmi.1996.0083

DO - 10.1006/spmi.1996.0083

M3 - Article

AN - SCOPUS:0029765336

SN - 0749-6036

VL - 20

SP - 317

EP - 322

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

Low temperature magnetoresistance of GaAs/AlGaAs corrugated-gate wires

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this