Low temperature magnetoresistance of GaAs/AlGaAs corrugated-gate wires

A. W. Widjaja, N. Sasaki, K. Yamamoto, Y. Ochiai, K. Ishibashi, J. P. Bird, Y. Aoyagi, T. Sugano, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.

Original languageEnglish (US)
Pages (from-to)317-322
Number of pages6
JournalSuperlattices and Microstructures
Issue number3
StatePublished - Oct 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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