We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.
|Original language||English (US)|
|Number of pages||7|
|Journal||Superlattices and Microstructures|
|Publication status||Published - Oct 1996|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics