Low-temperature ion mixing of yttrium and silicon

Terry Alford, P. Børgesen, J. W. Mayer, D. A. Lilienfeld

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Ion mixing of yttrium and amorphous silicon bilayers was measured as a function of fluence and temperature using 600-keV Xe++ ions between 80 and 498 K. At 80 K the mixing rate was in excellent agreement with a theoretical model based on thermal spike mixing. For temperatures up to ≊372 K, the temperature-dependent contributions accounted for less than 50% of the overall mixing rate. For mixing at or above 400 K, our results revealed the formation of an ion-beam-induced orthorhombic Y-Si phase, which is not normally formed during thermal anneals of such bilayers.

Original languageEnglish (US)
Pages (from-to)1288-1292
Number of pages5
JournalJournal of Applied Physics
Volume67
Issue number3
DOIs
StatePublished - 1990
Externally publishedYes

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yttrium
silicon
ions
spikes
amorphous silicon
temperature
fluence
ion beams

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Alford, T., Børgesen, P., Mayer, J. W., & Lilienfeld, D. A. (1990). Low-temperature ion mixing of yttrium and silicon. Journal of Applied Physics, 67(3), 1288-1292. https://doi.org/10.1063/1.345678

Low-temperature ion mixing of yttrium and silicon. / Alford, Terry; Børgesen, P.; Mayer, J. W.; Lilienfeld, D. A.

In: Journal of Applied Physics, Vol. 67, No. 3, 1990, p. 1288-1292.

Research output: Contribution to journalArticle

Alford, T, Børgesen, P, Mayer, JW & Lilienfeld, DA 1990, 'Low-temperature ion mixing of yttrium and silicon', Journal of Applied Physics, vol. 67, no. 3, pp. 1288-1292. https://doi.org/10.1063/1.345678
Alford, Terry ; Børgesen, P. ; Mayer, J. W. ; Lilienfeld, D. A. / Low-temperature ion mixing of yttrium and silicon. In: Journal of Applied Physics. 1990 ; Vol. 67, No. 3. pp. 1288-1292.
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