Low-temperature ion mixing of yttrium and silicon

T. L. Alford, P. Børgesen, J. W. Mayer, D. A. Lilienfeld

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6 Scopus citations

Abstract

Ion mixing of yttrium and amorphous silicon bilayers was measured as a function of fluence and temperature using 600-keV Xe++ ions between 80 and 498 K. At 80 K the mixing rate was in excellent agreement with a theoretical model based on thermal spike mixing. For temperatures up to ≊372 K, the temperature-dependent contributions accounted for less than 50% of the overall mixing rate. For mixing at or above 400 K, our results revealed the formation of an ion-beam-induced orthorhombic Y-Si phase, which is not normally formed during thermal anneals of such bilayers.

Original languageEnglish (US)
Pages (from-to)1288-1292
Number of pages5
JournalJournal of Applied Physics
Volume67
Issue number3
DOIs
StatePublished - Dec 1 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Alford, T. L., Børgesen, P., Mayer, J. W., & Lilienfeld, D. A. (1990). Low-temperature ion mixing of yttrium and silicon. Journal of Applied Physics, 67(3), 1288-1292. https://doi.org/10.1063/1.345678