Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding

J. Huang; D. K. Cha; A. Kaleczyc; J. H. Dinan; Ray Carpenter; M. J. Kim

Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding

J. Huang, D. K. Cha, A. Kaleczyc, J. H. Dinan, Ray Carpenter, M. J. Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have successfully integrated CdZnTe (CZT) (211)B with Si (100) by wafer bonding for subsequent epitaxial growth of HgCdTe (MCT). Both direct and indirect wafer bonding methods are presented here. CZT (211)B and Si (100) wafers were directly bonded with good strength. Since the initial CZT surface was rough and uneven, as characterized by atomic force microscopy (AFM) and optical technique, the bonding strength was affected by voids along the bonded interface. To mitigate the surface roughness of CZT wafer, the spin-on-glass (SOG) was used as the intermediate layer to bond CZT with Si at low temperature. The bond strength of the CZT(211)B/SOG/Si(100) was high enough to allow CZT to be back-side polished from 1mm down to about 2μm, and also to withstand thermal cycling with ΔT∼400°C. Infrared (IR) transmission images of bonded CZT/Si showed uniform bonding over large surface areas.

Original language	English (US)
Title of host publication	Proceedings - Electrochemical Society
Editors	K.D. Hobart, C.E. Hunt, H. Baumgart, T. Suga, S. Bengtsson
Pages	128-133
Number of pages	6
Volume	PV 2005-02
State	Published - 2005
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	5/16/05 → 5/20/05

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{afe832639d1f46c2b8148702aa7cf1ff,

title = "Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding",

abstract = "We have successfully integrated CdZnTe (CZT) (211)B with Si (100) by wafer bonding for subsequent epitaxial growth of HgCdTe (MCT). Both direct and indirect wafer bonding methods are presented here. CZT (211)B and Si (100) wafers were directly bonded with good strength. Since the initial CZT surface was rough and uneven, as characterized by atomic force microscopy (AFM) and optical technique, the bonding strength was affected by voids along the bonded interface. To mitigate the surface roughness of CZT wafer, the spin-on-glass (SOG) was used as the intermediate layer to bond CZT with Si at low temperature. The bond strength of the CZT(211)B/SOG/Si(100) was high enough to allow CZT to be back-side polished from 1mm down to about 2μm, and also to withstand thermal cycling with ΔT∼400°C. Infrared (IR) transmission images of bonded CZT/Si showed uniform bonding over large surface areas.",

author = "J. Huang and Cha, {D. K.} and A. Kaleczyc and Dinan, {J. H.} and Ray Carpenter and Kim, {M. J.}",

year = "2005",

language = "English (US)",

volume = "PV 2005-02",

pages = "128--133",

editor = "K.D. Hobart and C.E. Hunt and H. Baumgart and T. Suga and S. Bengtsson",

booktitle = "Proceedings - Electrochemical Society",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

}

TY - GEN

T1 - Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding

AU - Huang, J.

AU - Cha, D. K.

AU - Kaleczyc, A.

AU - Dinan, J. H.

AU - Carpenter, Ray

AU - Kim, M. J.

PY - 2005

Y1 - 2005

N2 - We have successfully integrated CdZnTe (CZT) (211)B with Si (100) by wafer bonding for subsequent epitaxial growth of HgCdTe (MCT). Both direct and indirect wafer bonding methods are presented here. CZT (211)B and Si (100) wafers were directly bonded with good strength. Since the initial CZT surface was rough and uneven, as characterized by atomic force microscopy (AFM) and optical technique, the bonding strength was affected by voids along the bonded interface. To mitigate the surface roughness of CZT wafer, the spin-on-glass (SOG) was used as the intermediate layer to bond CZT with Si at low temperature. The bond strength of the CZT(211)B/SOG/Si(100) was high enough to allow CZT to be back-side polished from 1mm down to about 2μm, and also to withstand thermal cycling with ΔT∼400°C. Infrared (IR) transmission images of bonded CZT/Si showed uniform bonding over large surface areas.

AB - We have successfully integrated CdZnTe (CZT) (211)B with Si (100) by wafer bonding for subsequent epitaxial growth of HgCdTe (MCT). Both direct and indirect wafer bonding methods are presented here. CZT (211)B and Si (100) wafers were directly bonded with good strength. Since the initial CZT surface was rough and uneven, as characterized by atomic force microscopy (AFM) and optical technique, the bonding strength was affected by voids along the bonded interface. To mitigate the surface roughness of CZT wafer, the spin-on-glass (SOG) was used as the intermediate layer to bond CZT with Si at low temperature. The bond strength of the CZT(211)B/SOG/Si(100) was high enough to allow CZT to be back-side polished from 1mm down to about 2μm, and also to withstand thermal cycling with ΔT∼400°C. Infrared (IR) transmission images of bonded CZT/Si showed uniform bonding over large surface areas.

UR - http://www.scopus.com/inward/record.url?scp=31844443870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31844443870&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:31844443870

VL - PV 2005-02

SP - 128

EP - 133

BT - Proceedings - Electrochemical Society

A2 - Hobart, K.D.

A2 - Hunt, C.E.

A2 - Baumgart, H.

A2 - Suga, T.

A2 - Bengtsson, S.

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding

Abstract

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ASJC Scopus subject areas

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