Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding

J. Huang, D. K. Cha, A. Kaleczyc, J. H. Dinan, Ray Carpenter, M. J. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have successfully integrated CdZnTe (CZT) (211)B with Si (100) by wafer bonding for subsequent epitaxial growth of HgCdTe (MCT). Both direct and indirect wafer bonding methods are presented here. CZT (211)B and Si (100) wafers were directly bonded with good strength. Since the initial CZT surface was rough and uneven, as characterized by atomic force microscopy (AFM) and optical technique, the bonding strength was affected by voids along the bonded interface. To mitigate the surface roughness of CZT wafer, the spin-on-glass (SOG) was used as the intermediate layer to bond CZT with Si at low temperature. The bond strength of the CZT(211)B/SOG/Si(100) was high enough to allow CZT to be back-side polished from 1mm down to about 2μm, and also to withstand thermal cycling with ΔT∼400°C. Infrared (IR) transmission images of bonded CZT/Si showed uniform bonding over large surface areas.

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsK.D. Hobart, C.E. Hunt, H. Baumgart, T. Suga, S. Bengtsson
Pages128-133
Number of pages6
VolumePV 2005-02
StatePublished - 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period5/16/055/20/05

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Huang, J., Cha, D. K., Kaleczyc, A., Dinan, J. H., Carpenter, R., & Kim, M. J. (2005). Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding. In K. D. Hobart, C. E. Hunt, H. Baumgart, T. Suga, & S. Bengtsson (Eds.), Proceedings - Electrochemical Society (Vol. PV 2005-02, pp. 128-133)