Low-temperature growth of InGaN films over the entire composition range by MBE

Chloe A M Fabien, Brendan P. Gunning, W. Alan Doolittle, Alec M. Fischer, Yong O. Wei, Hongen Xie, Fernando Ponce

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.

Original languageEnglish (US)
Pages (from-to)115-118
Number of pages4
JournalJournal of Crystal Growth
Volume425
DOIs
StatePublished - Jun 20 2015

Fingerprint

Gallium nitride
Indium
gallium nitrides
Growth temperature
Molecular beam epitaxy
indium
Chemical analysis
Optical properties
optical properties
Strain relaxation
Defect density
Stacking faults
Dislocations (crystals)
crystal defects
Surface morphology
Nitrogen
molecular beam epitaxy
gallium nitride
Plasmas
nitrogen

Keywords

  • A1. Atomic force microscopy
  • A1. Crystal structure
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Fabien, C. A. M., Gunning, B. P., Alan Doolittle, W., Fischer, A. M., Wei, Y. O., Xie, H., & Ponce, F. (2015). Low-temperature growth of InGaN films over the entire composition range by MBE. Journal of Crystal Growth, 425, 115-118. https://doi.org/10.1016/j.jcrysgro.2015.02.014

Low-temperature growth of InGaN films over the entire composition range by MBE. / Fabien, Chloe A M; Gunning, Brendan P.; Alan Doolittle, W.; Fischer, Alec M.; Wei, Yong O.; Xie, Hongen; Ponce, Fernando.

In: Journal of Crystal Growth, Vol. 425, 20.06.2015, p. 115-118.

Research output: Contribution to journalArticle

Fabien, CAM, Gunning, BP, Alan Doolittle, W, Fischer, AM, Wei, YO, Xie, H & Ponce, F 2015, 'Low-temperature growth of InGaN films over the entire composition range by MBE', Journal of Crystal Growth, vol. 425, pp. 115-118. https://doi.org/10.1016/j.jcrysgro.2015.02.014
Fabien CAM, Gunning BP, Alan Doolittle W, Fischer AM, Wei YO, Xie H et al. Low-temperature growth of InGaN films over the entire composition range by MBE. Journal of Crystal Growth. 2015 Jun 20;425:115-118. https://doi.org/10.1016/j.jcrysgro.2015.02.014
Fabien, Chloe A M ; Gunning, Brendan P. ; Alan Doolittle, W. ; Fischer, Alec M. ; Wei, Yong O. ; Xie, Hongen ; Ponce, Fernando. / Low-temperature growth of InGaN films over the entire composition range by MBE. In: Journal of Crystal Growth. 2015 ; Vol. 425. pp. 115-118.
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