TY - JOUR
T1 - Low-temperature growth of InGaN films over the entire composition range by MBE
AU - Fabien, Chloe A M
AU - Gunning, Brendan P.
AU - Alan Doolittle, W.
AU - Fischer, Alec M.
AU - Wei, Yong O.
AU - Xie, Hongen
AU - Ponce, Fernando
N1 - Publisher Copyright:
© 2015 Published by Elsevier B.V.
PY - 2015/7/28
Y1 - 2015/7/28
N2 - The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.
AB - The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.
KW - A1. Atomic force microscopy
KW - A1. Crystal structure
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B1. Nitrides
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U2 - 10.1016/j.jcrysgro.2015.02.014
DO - 10.1016/j.jcrysgro.2015.02.014
M3 - Article
AN - SCOPUS:84979963110
SN - 0022-0248
VL - 425
SP - 115
EP - 118
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -