Low-temperature growth of InGaN films over the entire composition range by MBE

Chloe A M Fabien, Brendan P. Gunning, W. Alan Doolittle, Alec M. Fischer, Yong O. Wei, Hongen Xie, Fernando Ponce

Research output: Contribution to journalArticle

21 Scopus citations


The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.

Original languageEnglish (US)
Pages (from-to)115-118
Number of pages4
JournalJournal of Crystal Growth
StatePublished - Jun 20 2015



  • A1. Atomic force microscopy
  • A1. Crystal structure
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Fabien, C. A. M., Gunning, B. P., Alan Doolittle, W., Fischer, A. M., Wei, Y. O., Xie, H., & Ponce, F. (2015). Low-temperature growth of InGaN films over the entire composition range by MBE. Journal of Crystal Growth, 425, 115-118. https://doi.org/10.1016/j.jcrysgro.2015.02.014