Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties

Engineering & Materials Science

• Plasma deposition 100%
• Growth temperature 97%
• Atomic layer deposition 92%
• Stoichiometry 81%
• Oxide films 74%
• Dielectric properties 73%
• Oxides 51%
• Photoelectron spectroscopy 29%
• Oxygen 20%
• X rays 15%
• Thin film transistors 11%
• Atomic force microscopy 10%
• Surface morphology 9%
• Crystallization 9%
• Electric properties 9%
• Crystalline materials 9%
• Electric potential 8%
• Transmission electron microscopy 8%
• Plasmas 7%
• Capacitance 7%
• Surface roughness 7%
• Temperature 6%
• Carbon 6%
• Chemical analysis 5%

Physics & Astronomy

• atomic layer epitaxy 62%
• stoichiometry 58%
• oxide films 54%
• dielectric properties 50%
• oxides 37%
• x ray spectroscopy 17%
• oxygen 15%
• photoelectron spectroscopy 14%
• cycles 11%
• electric potential 9%
• roughness 7%
• capacitance 6%
• transistors 6%
• breakdown 6%
• crystallization 6%
• atomic force microscopy 6%
• electrical properties 6%
• carbon 5%
• transmission electron microscopy 5%
• curves 4%
• thin films 4%
• temperature 2%

Chemical Compounds

• Atomic Layer Epitaxy 69%
• Dielectric Property 60%
• Reaction Stoichiometry 49%
• Oxide 32%
• Liquid Film 26%
• Photoelectron Spectroscopy 9%
• Purity 7%
• Dioxygen 7%
• Electrical Property 4%
• Atomic Force Microscopy 3%
• Crystallization 3%
• Transmission Electron Microscopy 3%
• Surface 3%
• Plasma 3%
• Crystal Structure 2%
• Carbon Atom 2%
• Amount 2%