Epitaxial growth of quaternary wide band gap semiconducting SiCAlN films was investigated. The compounds SiC and AlN were synthesized as a single-phase solid solution thin film by molecular beam epitaxy at 750 °. Two models for the hexagonal structure of the films were presented based on first-principles total-energy density functional theory calculations. The models were found in agreement with the experimental microstructures observed by transmission electron microscopy.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review Letters|
|State||Published - May 20 2002|
ASJC Scopus subject areas
- Physics and Astronomy(all)