Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

R. Roucka, J. Tolle, Andrew Chizmeshya, Peter Crozier, C. D. Poweleit, David Smith, I. S T Tsong, John Kouvetakis

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

Epitaxial growth of quaternary wide band gap semiconducting SiCAlN films was investigated. The compounds SiC and AlN were synthesized as a single-phase solid solution thin film by molecular beam epitaxy at 750 °. Two models for the hexagonal structure of the films were presented based on first-principles total-energy density functional theory calculations. The models were found in agreement with the experimental microstructures observed by transmission electron microscopy.

Original languageEnglish (US)
Article number206102
Pages (from-to)2061021-2061024
Number of pages4
JournalPhysical Review Letters
Volume88
Issue number20
StatePublished - May 20 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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