Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

R. Roucka; J. Tolle; Andrew Chizmeshya; Peter Crozier; C. D. Poweleit; David Smith; I. S T Tsong; John Kouvetakis

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

R. Roucka, J. Tolle, Andrew Chizmeshya, Peter Crozier, C. D. Poweleit, David Smith, I. S T Tsong, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial growth of quaternary wide band gap semiconducting SiCAlN films was investigated. The compounds SiC and AlN were synthesized as a single-phase solid solution thin film by molecular beam epitaxy at 750 °. Two models for the hexagonal structure of the films were presented based on first-principles total-energy density functional theory calculations. The models were found in agreement with the experimental microstructures observed by transmission electron microscopy.

Original language	English (US)
Article number	206102
Pages (from-to)	2061021-2061024
Number of pages	4
Journal	Physical Review Letters
Volume	88
Issue number	20
State	Published - May 20 2002

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN",

abstract = "Epitaxial growth of quaternary wide band gap semiconducting SiCAlN films was investigated. The compounds SiC and AlN were synthesized as a single-phase solid solution thin film by molecular beam epitaxy at 750 °. Two models for the hexagonal structure of the films were presented based on first-principles total-energy density functional theory calculations. The models were found in agreement with the experimental microstructures observed by transmission electron microscopy.",

author = "R. Roucka and J. Tolle and Andrew Chizmeshya and Peter Crozier and Poweleit, {C. D.} and David Smith and Tsong, {I. S T} and John Kouvetakis",

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language = "English (US)",

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T1 - Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

AU - Roucka, R.

AU - Tolle, J.

AU - Chizmeshya, Andrew

AU - Crozier, Peter

AU - Poweleit, C. D.

AU - Smith, David

AU - Tsong, I. S T

AU - Kouvetakis, John

PY - 2002/5/20

Y1 - 2002/5/20

N2 - Epitaxial growth of quaternary wide band gap semiconducting SiCAlN films was investigated. The compounds SiC and AlN were synthesized as a single-phase solid solution thin film by molecular beam epitaxy at 750 °. Two models for the hexagonal structure of the films were presented based on first-principles total-energy density functional theory calculations. The models were found in agreement with the experimental microstructures observed by transmission electron microscopy.

AB - Epitaxial growth of quaternary wide band gap semiconducting SiCAlN films was investigated. The compounds SiC and AlN were synthesized as a single-phase solid solution thin film by molecular beam epitaxy at 750 °. Two models for the hexagonal structure of the films were presented based on first-principles total-energy density functional theory calculations. The models were found in agreement with the experimental microstructures observed by transmission electron microscopy.

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M1 - 206102

ER -

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Abstract

ASJC Scopus subject areas

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