Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

R. Roucka, J. Tolle, Andrew Chizmeshya, Peter Crozier, C. D. Poweleit, David Smith, I. S T Tsong, John Kouvetakis

Research output: Contribution to journalArticle

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Abstract

Epitaxial growth of quaternary wide band gap semiconducting SiCAlN films was investigated. The compounds SiC and AlN were synthesized as a single-phase solid solution thin film by molecular beam epitaxy at 750 °. Two models for the hexagonal structure of the films were presented based on first-principles total-energy density functional theory calculations. The models were found in agreement with the experimental microstructures observed by transmission electron microscopy.

Original languageEnglish (US)
Pages (from-to)2061021-2061024
Number of pages4
JournalPhysical Review Letters
Volume88
Issue number20
StatePublished - May 20 2002

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semiconducting films
broadband
solid solutions
molecular beam epitaxy
flux density
density functional theory
transmission electron microscopy
microstructure
thin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN. / Roucka, R.; Tolle, J.; Chizmeshya, Andrew; Crozier, Peter; Poweleit, C. D.; Smith, David; Tsong, I. S T; Kouvetakis, John.

In: Physical Review Letters, Vol. 88, No. 20, 20.05.2002, p. 2061021-2061024.

Research output: Contribution to journalArticle

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