LOW TEMPERATURE DEGRADATION OF (Al,Ga)As/GaAs MODULATION DOPED FIELD-EFFECT TRANSISTORS.

A. Kastalsky; R. A. Kiehl

LOW TEMPERATURE DEGRADATION OF (Al,Ga)As/GaAs MODULATION DOPED FIELD-EFFECT TRANSISTORS.

A. Kastalsky, R. A. Kiehl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The modulation doped field effect transistor (MODFET) represents a most promising high speed low power dissipation device. Although the MODFET demonstrates good performance at 300K the most impressive results are obtained at 77K, at which the MODFET holds a record in speed among existing semiconductor transistors. However, excellent performances of this device at low temperatures are always measured under conditions of white light illumination. We present a study of the low temperature behavior of the MODFET together with the results obtained on specially designed test devices and structures. We discuss the physical model of the observed phenomena.

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Pages	535-540
Number of pages	6
Edition	79
State	Published - Dec 1 1986
Externally published	Yes

Publication series

Name	Institute of Physics Conference Series
Number	79
ISSN (Print)	0373-0751

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "LOW TEMPERATURE DEGRADATION OF (Al,Ga)As/GaAs MODULATION DOPED FIELD-EFFECT TRANSISTORS.",

abstract = "The modulation doped field effect transistor (MODFET) represents a most promising high speed low power dissipation device. Although the MODFET demonstrates good performance at 300K the most impressive results are obtained at 77K, at which the MODFET holds a record in speed among existing semiconductor transistors. However, excellent performances of this device at low temperatures are always measured under conditions of white light illumination. We present a study of the low temperature behavior of the MODFET together with the results obtained on specially designed test devices and structures. We discuss the physical model of the observed phenomena.",

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Y1 - 1986/12/1

N2 - The modulation doped field effect transistor (MODFET) represents a most promising high speed low power dissipation device. Although the MODFET demonstrates good performance at 300K the most impressive results are obtained at 77K, at which the MODFET holds a record in speed among existing semiconductor transistors. However, excellent performances of this device at low temperatures are always measured under conditions of white light illumination. We present a study of the low temperature behavior of the MODFET together with the results obtained on specially designed test devices and structures. We discuss the physical model of the observed phenomena.

AB - The modulation doped field effect transistor (MODFET) represents a most promising high speed low power dissipation device. Although the MODFET demonstrates good performance at 300K the most impressive results are obtained at 77K, at which the MODFET holds a record in speed among existing semiconductor transistors. However, excellent performances of this device at low temperatures are always measured under conditions of white light illumination. We present a study of the low temperature behavior of the MODFET together with the results obtained on specially designed test devices and structures. We discuss the physical model of the observed phenomena.

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BT - Institute of Physics Conference Series

ER -

LOW TEMPERATURE DEGRADATION OF (Al,Ga)As/GaAs MODULATION DOPED FIELD-EFFECT TRANSISTORS.

Abstract

Publication series

ASJC Scopus subject areas

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