LOW TEMPERATURE DEGRADATION OF (Al,Ga)As/GaAs MODULATION DOPED FIELD-EFFECT TRANSISTORS.

A. Kastalsky, R. A. Kiehl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The modulation doped field effect transistor (MODFET) represents a most promising high speed low power dissipation device. Although the MODFET demonstrates good performance at 300K the most impressive results are obtained at 77K, at which the MODFET holds a record in speed among existing semiconductor transistors. However, excellent performances of this device at low temperatures are always measured under conditions of white light illumination. We present a study of the low temperature behavior of the MODFET together with the results obtained on specially designed test devices and structures. We discuss the physical model of the observed phenomena.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages535-540
Number of pages6
Edition79
StatePublished - Dec 1 1986
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number79
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'LOW TEMPERATURE DEGRADATION OF (Al,Ga)As/GaAs MODULATION DOPED FIELD-EFFECT TRANSISTORS.'. Together they form a unique fingerprint.

Cite this