Low temperature chemical vapor deposition of Si-based compounds via SiH 3SiH 2SiH 3: Metastable SiSn/GeSn/Si(100) heteroepitaxial structures

J. Tolle, Andrew Chizmeshya, Y. Y. Fang, John Kouvetakis, V. R. D'Costa, C. W. Hu, Jose Menendez, I. S T Tsong

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Abstract

Growth of Si1-x Snx alloys on Ge1-y Sny -buffered Si(100) was achieved via reactions of Sn D4 and Si H3 Si H2 Si H3 at 275 °C. Kinetic studies indicate that unprecedented low growth temperatures are made possible by the highly reactive Si H2 groups. The authors obtain supersaturated metastable compositions (y∼25%) near the indirect to direct band gap crossover predicted by first principles simulations. Extensive characterizations of composition, structure, and morphology show that the SiSnGeSn films grow lattice matched via a "compositional pinning" mechanism. The initial Raman observations of Si-Sn bond vibrations in a condensed phase are discussed in the context of simulated bond distributions in the alloys.

Original languageEnglish (US)
Article number231924
JournalApplied Physics Letters
Volume89
Issue number23
DOIs
StatePublished - Dec 18 2006

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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