@article{c76f61a12fc64650ac74c4f1d2829493,
title = "Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell",
abstract = "In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.",
keywords = "CBRAM, Cu, PMC, RRAM, direct tunneling, low temperature, silica",
author = "W. Chen and N. Chamele and {Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki",
note = "Funding Information: Manuscript received July 19, 2017; accepted July 29, 2017. Date of publication August 1, 2017; date of current version August 23, 2017. This work was supported in part by the Defense Threat Reduction Agency under Grant HDTRA1-11-1-0055 and in part by the Arizona Board of Regents, Regents Innovation Funds Program. The review of this letter was arranged by Editor B. Govoreanu. (Corresponding author: W. Chen.) The authors are with the School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706 USA (e-mail: wchen113@asu.edu). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2017",
month = sep,
doi = "10.1109/LED.2017.2734743",
language = "English (US)",
volume = "38",
pages = "1244--1247",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}