Abstract

In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.

Original languageEnglish (US)
Article number7999163
Pages (from-to)1244-1247
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number9
DOIs
StatePublished - Sep 1 2017

Fingerprint

Metallizing
Silicon Dioxide
Silica
Temperature

Keywords

  • CBRAM
  • Cu
  • direct tunneling
  • low temperature
  • PMC
  • RRAM
  • silica

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Low-Temperature Characterization of Cu-Cu : Silica-Based Programmable Metallization Cell. / Chen, W.; Chamele, N.; Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael.

In: IEEE Electron Device Letters, Vol. 38, No. 9, 7999163, 01.09.2017, p. 1244-1247.

Research output: Contribution to journalArticle

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AB - In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.

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