Abstract

In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.

Original languageEnglish (US)
Article number7999163
Pages (from-to)1244-1247
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number9
DOIs
StatePublished - Sep 1 2017

Keywords

  • CBRAM
  • Cu
  • direct tunneling
  • low temperature
  • PMC
  • RRAM
  • silica

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Low-Temperature Characterization of Cu-Cu: Silica-Based Programmable Metallization Cell'. Together they form a unique fingerprint.

  • Cite this