Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell

W. Chen; N. Chamele; Yago Gonzalez Velo; Hugh Barnaby; Michael Kozicki

doi:10.1109/LED.2017.2734743

Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell

W. Chen, N. Chamele, Yago Gonzalez Velo, Hugh Barnaby, Michael Kozicki

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.

Original language	English (US)
Article number	7999163
Pages (from-to)	1244-1247
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	9
DOIs	https://doi.org/10.1109/LED.2017.2734743
State	Published - Sep 2017

Keywords

CBRAM
Cu
PMC
RRAM
direct tunneling
low temperature
silica

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2017.2734743

Cite this

@article{c76f61a12fc64650ac74c4f1d2829493,

title = "Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell",

abstract = "In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.",

keywords = "CBRAM, Cu, PMC, RRAM, direct tunneling, low temperature, silica",

author = "W. Chen and N. Chamele and {Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2017",

month = sep,

doi = "10.1109/LED.2017.2734743",

language = "English (US)",

volume = "38",

pages = "1244--1247",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell

AU - Chen, W.

AU - Chamele, N.

AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Kozicki, Michael

PY - 2017/9

Y1 - 2017/9

N2 - In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.

AB - In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.

KW - CBRAM

KW - Cu

KW - PMC

KW - RRAM

KW - direct tunneling

KW - low temperature

KW - silica

UR - http://www.scopus.com/inward/record.url?scp=85028910124&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028910124&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2734743

DO - 10.1109/LED.2017.2734743

M3 - Article

AN - SCOPUS:85028910124

SN - 0741-3106

VL - 38

SP - 1244

EP - 1247

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 7999163

ER -

Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this