Low-temperature characteristics of HfO

Runchen Fang; Wenhao Chen; Ligang Gao; Weijie Yu; Shimeng Yu

doi:10.1109/LED.2015.2420665

Low-temperature characteristics of HfO

Runchen Fang, Wenhao Chen, Ligang Gao, Weijie Yu, Shimeng Yu

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfO_x/TiN resistive random access memory devices. For the first time, Pt/HfO_x/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.

Original language	English (US)
Article number	7081349
Pages (from-to)	567-569
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	6
DOIs	https://doi.org/10.1109/LED.2015.2420665
State	Published - Jun 1 2015

Keywords

HfO2
RRAM
ReRAM
conduction mechanism
hopping
low temperature
resistive switching
variation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2015.2420665

Cite this

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title = "Low-temperature characteristics of HfO",

abstract = "This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfOx/TiN resistive random access memory devices. For the first time, Pt/HfOx/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.",

keywords = "HfO2, RRAM, ReRAM, conduction mechanism, hopping, low temperature, resistive switching, variation",

author = "Runchen Fang and Wenhao Chen and Ligang Gao and Weijie Yu and Shimeng Yu",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

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AU - Chen, Wenhao

AU - Gao, Ligang

AU - Yu, Weijie

AU - Yu, Shimeng

PY - 2015/6/1

Y1 - 2015/6/1

N2 - This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfOx/TiN resistive random access memory devices. For the first time, Pt/HfOx/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.

AB - This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfOx/TiN resistive random access memory devices. For the first time, Pt/HfOx/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.

KW - HfO2

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KW - ReRAM

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KW - variation

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Low-temperature characteristics of HfO

Abstract

Keywords

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