Abstract

This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfO<inf>x</inf>/TiN resistive random access memory devices. For the first time, Pt/HfO<inf>x</inf>/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.

Original languageEnglish (US)
Article number7081349
Pages (from-to)567-569
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number6
DOIs
StatePublished - Jun 1 2015

Keywords

  • conduction mechanism
  • HfO2
  • hopping
  • low temperature
  • ReRAM
  • resistive switching
  • RRAM
  • variation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Fang, R., Chen, W., Gao, L., Yu, W., & Yu, S. (2015). Low-temperature characteristics of HfO. IEEE Electron Device Letters, 36(6), 567-569. [7081349]. https://doi.org/10.1109/LED.2015.2420665