Abstract

This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfO<inf>x</inf>/TiN resistive random access memory devices. For the first time, Pt/HfO<inf>x</inf>/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.

Original languageEnglish (US)
Article number7081349
Pages (from-to)567-569
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number6
DOIs
StatePublished - Jun 1 2015

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Temperature
Activation energy
Data storage equipment
Electric potential

Keywords

  • conduction mechanism
  • HfO2
  • hopping
  • low temperature
  • ReRAM
  • resistive switching
  • RRAM
  • variation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Fang, R., Chen, W., Gao, L., Yu, W., & Yu, S. (2015). Low-temperature characteristics of HfO. IEEE Electron Device Letters, 36(6), 567-569. [7081349]. https://doi.org/10.1109/LED.2015.2420665

Low-temperature characteristics of HfO. / Fang, Runchen; Chen, Wenhao; Gao, Ligang; Yu, Weijie; Yu, Shimeng.

In: IEEE Electron Device Letters, Vol. 36, No. 6, 7081349, 01.06.2015, p. 567-569.

Research output: Contribution to journalArticle

Fang, R, Chen, W, Gao, L, Yu, W & Yu, S 2015, 'Low-temperature characteristics of HfO', IEEE Electron Device Letters, vol. 36, no. 6, 7081349, pp. 567-569. https://doi.org/10.1109/LED.2015.2420665
Fang R, Chen W, Gao L, Yu W, Yu S. Low-temperature characteristics of HfO. IEEE Electron Device Letters. 2015 Jun 1;36(6):567-569. 7081349. https://doi.org/10.1109/LED.2015.2420665
Fang, Runchen ; Chen, Wenhao ; Gao, Ligang ; Yu, Weijie ; Yu, Shimeng. / Low-temperature characteristics of HfO. In: IEEE Electron Device Letters. 2015 ; Vol. 36, No. 6. pp. 567-569.
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