Abstract

This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfOx/TiN resistive random access memory devices. For the first time, Pt/HfOx/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.

Original languageEnglish (US)
Article number7081349
Pages (from-to)567-569
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number6
DOIs
StatePublished - Jun 1 2015

Keywords

  • HfO2
  • RRAM
  • ReRAM
  • conduction mechanism
  • hopping
  • low temperature
  • resistive switching
  • variation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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