LOW SURFACE RECOMBINATION VELOCITIES ON DOPED SILICON AND THEIR IMPLICATIONS FOR POINT CONTACT SOLAR CELLS.

Richard King, R. A. Sinton, R. M. Swanson, T. F. Ciszek

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Citations (Scopus)

Abstract

Surface recombination velocities (SRVs) have been measured on p-type silicon with high bulk lifetime, and an empirical relationship between dopant concentration and SRV was found. The SRV values measured on doped silicon with no doping grading range from 100 cm/s to 34 cm/s for boron concentrations of 1. 3 multiplied by 10**1**7 atoms/cm**3 and 4. 0 multiplied by 10**1**5 atoms/cm**3, respectively. These values are lower than those generally used for modeling high-low junctions. SRV increases with decreasing n//e, the excess photogenerated electron concentration at the Si/SiO interface. These data are used to predict J//0, the reverse saturation current, for surfaces that are shielded by back surface fields produced by high-low junctions. Emitter modeling indicates that it is possible to achieve values of J//0 in the neighborhood of 1 multiplied by 10**-**1**4 A/cm**2. Because of the strong dependence of the efficiency of a point contact solar cell operating at one sun on carrier recombination at the surface, surface diffusions that have a J//0 of 1 multiplied by 10**-**1**4 A/cm**2 would boost the efficiency significantly.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherIEEE
Pages1168-1173
Number of pages6
StatePublished - 1987
Externally publishedYes

Fingerprint

Point contacts
Solar cells
solar cells
Silicon
silicon
Doping (additives)
Atoms
Surface diffusion
surface diffusion
acceleration (physics)
Sun
atoms
Boron
emitters
sun
boron
saturation
life (durability)
Electrons
electrons

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

King, R., Sinton, R. A., Swanson, R. M., & Ciszek, T. F. (1987). LOW SURFACE RECOMBINATION VELOCITIES ON DOPED SILICON AND THEIR IMPLICATIONS FOR POINT CONTACT SOLAR CELLS. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1168-1173). IEEE.

LOW SURFACE RECOMBINATION VELOCITIES ON DOPED SILICON AND THEIR IMPLICATIONS FOR POINT CONTACT SOLAR CELLS. / King, Richard; Sinton, R. A.; Swanson, R. M.; Ciszek, T. F.

Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, 1987. p. 1168-1173.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

King, R, Sinton, RA, Swanson, RM & Ciszek, TF 1987, LOW SURFACE RECOMBINATION VELOCITIES ON DOPED SILICON AND THEIR IMPLICATIONS FOR POINT CONTACT SOLAR CELLS. in Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, pp. 1168-1173.
King R, Sinton RA, Swanson RM, Ciszek TF. LOW SURFACE RECOMBINATION VELOCITIES ON DOPED SILICON AND THEIR IMPLICATIONS FOR POINT CONTACT SOLAR CELLS. In Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE. 1987. p. 1168-1173
King, Richard ; Sinton, R. A. ; Swanson, R. M. ; Ciszek, T. F. / LOW SURFACE RECOMBINATION VELOCITIES ON DOPED SILICON AND THEIR IMPLICATIONS FOR POINT CONTACT SOLAR CELLS. Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, 1987. pp. 1168-1173
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