Low Stokes shift in thick and homogeneous InGaN epilayers

S. Srinivasan; F. Bertram; A. Bell; Fernando Ponce; S. Tanaka; H. Omiya; Y. Nakagawa

doi:10.1063/1.1436531

Low Stokes shift in thick and homogeneous InGaN epilayers

S. Srinivasan, F. Bertram, A. Bell, Fernando Ponce, S. Tanaka, H. Omiya, Y. Nakagawa

Physics

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Abstract

The optical properties of thick In_xGa_1-xN layers have been studied using optical absorption and cathodoluminescence techniques. The indium composition x of the layers ranged from 0.03 to 0.17 as determined by Rutherford backscattering measurements. The difference between the band gap and the peak emission energy (Stokes shift) was found to be considerably smaller than reported in the past for these alloys. Monochromatic images show that light emission from most of the film is homogeneous and is associated with a low Stokes shift. A second emission band at longer wavelengths is observed for x≥0.08. This band originates from indium-rich regions in the vicinity of extended defects, and exhibits a larger Stokes shift. Our observations indicate that it is possible to grow InGaN epilayers with high indium composition, high homogeneity, and lower Stokes shift.

Original language	English (US)
Pages (from-to)	550-552
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	4
DOIs	https://doi.org/10.1063/1.1436531
State	Published - Jan 28 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1436531

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title = "Low Stokes shift in thick and homogeneous InGaN epilayers",

abstract = "The optical properties of thick InxGa1-xN layers have been studied using optical absorption and cathodoluminescence techniques. The indium composition x of the layers ranged from 0.03 to 0.17 as determined by Rutherford backscattering measurements. The difference between the band gap and the peak emission energy (Stokes shift) was found to be considerably smaller than reported in the past for these alloys. Monochromatic images show that light emission from most of the film is homogeneous and is associated with a low Stokes shift. A second emission band at longer wavelengths is observed for x≥0.08. This band originates from indium-rich regions in the vicinity of extended defects, and exhibits a larger Stokes shift. Our observations indicate that it is possible to grow InGaN epilayers with high indium composition, high homogeneity, and lower Stokes shift.",

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T1 - Low Stokes shift in thick and homogeneous InGaN epilayers

AU - Srinivasan, S.

AU - Bertram, F.

AU - Bell, A.

AU - Ponce, Fernando

AU - Tanaka, S.

AU - Omiya, H.

AU - Nakagawa, Y.

PY - 2002/1/28

Y1 - 2002/1/28

N2 - The optical properties of thick InxGa1-xN layers have been studied using optical absorption and cathodoluminescence techniques. The indium composition x of the layers ranged from 0.03 to 0.17 as determined by Rutherford backscattering measurements. The difference between the band gap and the peak emission energy (Stokes shift) was found to be considerably smaller than reported in the past for these alloys. Monochromatic images show that light emission from most of the film is homogeneous and is associated with a low Stokes shift. A second emission band at longer wavelengths is observed for x≥0.08. This band originates from indium-rich regions in the vicinity of extended defects, and exhibits a larger Stokes shift. Our observations indicate that it is possible to grow InGaN epilayers with high indium composition, high homogeneity, and lower Stokes shift.

AB - The optical properties of thick InxGa1-xN layers have been studied using optical absorption and cathodoluminescence techniques. The indium composition x of the layers ranged from 0.03 to 0.17 as determined by Rutherford backscattering measurements. The difference between the band gap and the peak emission energy (Stokes shift) was found to be considerably smaller than reported in the past for these alloys. Monochromatic images show that light emission from most of the film is homogeneous and is associated with a low Stokes shift. A second emission band at longer wavelengths is observed for x≥0.08. This band originates from indium-rich regions in the vicinity of extended defects, and exhibits a larger Stokes shift. Our observations indicate that it is possible to grow InGaN epilayers with high indium composition, high homogeneity, and lower Stokes shift.

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Low Stokes shift in thick and homogeneous InGaN epilayers

Abstract

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