Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs

Meng Tao, Darshak Udeshi, Shruddha Agarwal, Nasir Basit, Eduardo Maldonado, Wiley P. Kirk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Schottky source/drain (S/D) in Si-CMOS provide an alternative to current approaches in S/D, channel, and gate-stack engineering. The Schottky S/D PMOS has been demonstrated at a number of university and industrial laboratories. The bottleneck for the Schottky S/D NMOS is the fact that none of the common metals or metal silicides has a low enough barrier height (∼0.2 eV) on n-type Si. A method to produce low Schottky barriers on n-type Si with common metals including aluminum (Al) and chromium (Cr) is reported in this paper. The interface between metal and Si(100) is engineered at the atomic scale with a monolayer of selenium (Se) to reduce the density of interface states, and the engineered interface shows inertness to chemical and electronic processes at the interface. One consequence of this electronic inertness is that the Schottky barrier is now more dependent on the metal work function. Al and Cr both have work functions very close to the Si electron affinity. It is found that the Schottky barrier of Al on Se-engineered n-type Si(100) is 0.08 eV, and that of Cr is 0.26 eV. These numbers agree well with the ideal Schottky barrier heights for Al and Cr on n-type Si(100), but are significantly different from the barrier heights known for four decades for these metals on n-type Si(100). These results bring new hope for the Schottky S/D NMOS with a metal commonly used in the Si industry.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsT-J. King, B. Yu, R.J.P. Lander, S. Saito
Pages297-302
Number of pages6
Volume765
StatePublished - 2003
Externally publishedYes
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology - San Francisco, CA, United States
Duration: Apr 22 2003Apr 24 2003

Other

OtherMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology
CountryUnited States
CitySan Francisco, CA
Period4/22/034/24/03

Fingerprint

Metals
Chromium
Aluminum
Selenium
Industrial laboratories
Electron affinity
Silicides
Interface states
Monolayers
Industry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tao, M., Udeshi, D., Agarwal, S., Basit, N., Maldonado, E., & Kirk, W. P. (2003). Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs. In T-J. King, B. Yu, R. J. P. Lander, & S. Saito (Eds.), Materials Research Society Symposium - Proceedings (Vol. 765, pp. 297-302)

Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs. / Tao, Meng; Udeshi, Darshak; Agarwal, Shruddha; Basit, Nasir; Maldonado, Eduardo; Kirk, Wiley P.

Materials Research Society Symposium - Proceedings. ed. / T-J. King; B. Yu; R.J.P. Lander; S. Saito. Vol. 765 2003. p. 297-302.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tao, M, Udeshi, D, Agarwal, S, Basit, N, Maldonado, E & Kirk, WP 2003, Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs. in T-J King, B Yu, RJP Lander & S Saito (eds), Materials Research Society Symposium - Proceedings. vol. 765, pp. 297-302, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology, San Francisco, CA, United States, 4/22/03.
Tao M, Udeshi D, Agarwal S, Basit N, Maldonado E, Kirk WP. Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs. In King T-J, Yu B, Lander RJP, Saito S, editors, Materials Research Society Symposium - Proceedings. Vol. 765. 2003. p. 297-302
Tao, Meng ; Udeshi, Darshak ; Agarwal, Shruddha ; Basit, Nasir ; Maldonado, Eduardo ; Kirk, Wiley P. / Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs. Materials Research Society Symposium - Proceedings. editor / T-J. King ; B. Yu ; R.J.P. Lander ; S. Saito. Vol. 765 2003. pp. 297-302
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