Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

J. G. Zhu, X. L. Yang, M. Tao

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Low-resistance Ohmic contacts fabricated by selenium passivation between titanium and n-type silicon (1 0 0) substrates have been characterized by the four-point probe and circular transmission line method. Selenium passivation terminates dangling bonds on the Si(1 0 0) surface and reduces the Schottky barrier height between Ti and n-type Si(1 0 0) substrates. Sheet resistance of the Ti-Si contacts on Se-passivated 1019 cm-3 doped Si substrates shows a ∼30% reduction as compared with control samples. Accordingly, the extracted contact resistance is reduced by about an order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 29-times reduction in contact resistivity is achieved by Se passivation on highly-doped Si-on-insulator substrates with a 500 un-doped Si buffer layer.

Original languageEnglish (US)
Article number031
Pages (from-to)547-550
Number of pages4
JournalJournal of Physics D: Applied Physics
Volume40
Issue number2
DOIs
StatePublished - Jan 21 2007
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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