Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

J. G. Zhu, X. L. Yang, Meng Tao

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Low-resistance Ohmic contacts fabricated by selenium passivation between titanium and n-type silicon (1 0 0) substrates have been characterized by the four-point probe and circular transmission line method. Selenium passivation terminates dangling bonds on the Si(1 0 0) surface and reduces the Schottky barrier height between Ti and n-type Si(1 0 0) substrates. Sheet resistance of the Ti-Si contacts on Se-passivated 1019 cm-3 doped Si substrates shows a ∼30% reduction as compared with control samples. Accordingly, the extracted contact resistance is reduced by about an order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 29-times reduction in contact resistivity is achieved by Se passivation on highly-doped Si-on-insulator substrates with a 500 un-doped Si buffer layer.

Original languageEnglish (US)
Article number031
Pages (from-to)547-550
Number of pages4
JournalJournal of Physics D: Applied Physics
Volume40
Issue number2
DOIs
StatePublished - Jan 21 2007
Externally publishedYes

Fingerprint

low resistance
Selenium
Silicon
selenium
Titanium
Passivation
passivity
Monolayers
titanium
silicon
Substrates
electric contacts
Dangling bonds
Ohmic contacts
Sheet resistance
Contact resistance
Buffer layers
contact resistance
transmission lines
Electric lines

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation. / Zhu, J. G.; Yang, X. L.; Tao, Meng.

In: Journal of Physics D: Applied Physics, Vol. 40, No. 2, 031, 21.01.2007, p. 547-550.

Research output: Contribution to journalArticle

@article{980a84fd062f4b5c8301355e9080339f,
title = "Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation",
abstract = "Low-resistance Ohmic contacts fabricated by selenium passivation between titanium and n-type silicon (1 0 0) substrates have been characterized by the four-point probe and circular transmission line method. Selenium passivation terminates dangling bonds on the Si(1 0 0) surface and reduces the Schottky barrier height between Ti and n-type Si(1 0 0) substrates. Sheet resistance of the Ti-Si contacts on Se-passivated 1019 cm-3 doped Si substrates shows a ∼30{\%} reduction as compared with control samples. Accordingly, the extracted contact resistance is reduced by about an order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 29-times reduction in contact resistivity is achieved by Se passivation on highly-doped Si-on-insulator substrates with a 500 un-doped Si buffer layer.",
author = "Zhu, {J. G.} and Yang, {X. L.} and Meng Tao",
year = "2007",
month = "1",
day = "21",
doi = "10.1088/0022-3727/40/2/031",
language = "English (US)",
volume = "40",
pages = "547--550",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "2",

}

TY - JOUR

T1 - Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

AU - Zhu, J. G.

AU - Yang, X. L.

AU - Tao, Meng

PY - 2007/1/21

Y1 - 2007/1/21

N2 - Low-resistance Ohmic contacts fabricated by selenium passivation between titanium and n-type silicon (1 0 0) substrates have been characterized by the four-point probe and circular transmission line method. Selenium passivation terminates dangling bonds on the Si(1 0 0) surface and reduces the Schottky barrier height between Ti and n-type Si(1 0 0) substrates. Sheet resistance of the Ti-Si contacts on Se-passivated 1019 cm-3 doped Si substrates shows a ∼30% reduction as compared with control samples. Accordingly, the extracted contact resistance is reduced by about an order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 29-times reduction in contact resistivity is achieved by Se passivation on highly-doped Si-on-insulator substrates with a 500 un-doped Si buffer layer.

AB - Low-resistance Ohmic contacts fabricated by selenium passivation between titanium and n-type silicon (1 0 0) substrates have been characterized by the four-point probe and circular transmission line method. Selenium passivation terminates dangling bonds on the Si(1 0 0) surface and reduces the Schottky barrier height between Ti and n-type Si(1 0 0) substrates. Sheet resistance of the Ti-Si contacts on Se-passivated 1019 cm-3 doped Si substrates shows a ∼30% reduction as compared with control samples. Accordingly, the extracted contact resistance is reduced by about an order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 29-times reduction in contact resistivity is achieved by Se passivation on highly-doped Si-on-insulator substrates with a 500 un-doped Si buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=33947637152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947637152&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/40/2/031

DO - 10.1088/0022-3727/40/2/031

M3 - Article

VL - 40

SP - 547

EP - 550

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 2

M1 - 031

ER -