Low-resistance Ti/n-type Si(100) contacts by monolayer Se passivation

J. G. Zhu, X. L. Yang, M. Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-resistance contacts fabricated by selenium passivation between Ti and n-type Si(100) substrates have been characterized by low-temperature I-V, four-point probe and circular transmission line methods. The Ti-Si contacts on Se-passivated samples demonstrate a significant reduction in Schottky barrier height over control samples in low-temperature 1-V. Sheet resistance of the contacts on Se-passivated 1019 cm-3 doped n-type Si(100) substrates shows a 30% reduction as compared with control samples. Accordingly, the extracted contact resistance decreases by about one order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 125%-2900% reduction in contact resistivity is achieved by Se passivation on highly-doped n-type SOI substrates with 500 Å un-doped Si buffer layer. The reduction in contact resistance is attributed to the minimization of interface states between Ti and Si(100) surface. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationSilicon Materials Science and Technology X
Pages401-409
Number of pages9
Edition2
StatePublished - Jul 3 2006
Externally publishedYes
Event10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Publication series

NameECS Transactions
Number2
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period5/7/065/12/06

ASJC Scopus subject areas

  • Engineering(all)

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