@inproceedings{8eb426f6069e4e96a242bb573a7d1bfb,
title = "Low-resistance Ti/n-type Si(100) contacts by monolayer Se passivation",
abstract = "Low-resistance contacts fabricated by selenium passivation between Ti and n-type Si(100) substrates have been characterized by low-temperature I-V, four-point probe and circular transmission line methods. The Ti-Si contacts on Se-passivated samples demonstrate a significant reduction in Schottky barrier height over control samples in low-temperature 1-V. Sheet resistance of the contacts on Se-passivated 1019 cm-3 doped n-type Si(100) substrates shows a 30% reduction as compared with control samples. Accordingly, the extracted contact resistance decreases by about one order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 125%-2900% reduction in contact resistivity is achieved by Se passivation on highly-doped n-type SOI substrates with 500 {\AA} un-doped Si buffer layer. The reduction in contact resistance is attributed to the minimization of interface states between Ti and Si(100) surface. Copyright The Electrochemical Society.",
author = "Zhu, {J. G.} and Yang, {X. L.} and M. Tao",
year = "2006",
doi = "10.1149/1.2195676",
language = "English (US)",
isbn = "156677439X",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "401--409",
booktitle = "Silicon Materials Science and Technology X",
edition = "2",
note = "10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society ; Conference date: 07-05-2006 Through 12-05-2006",
}