Low-resistance contacts fabricated by selenium passivation between Ti and n-type Si(100) substrates have been characterized by low-temperature I-V, four-point probe and circular transmission line methods. The Ti-Si contacts on Se-passivated samples demonstrate a significant reduction in Schottky barrier height over control samples in low-temperature 1-V. Sheet resistance of the contacts on Se-passivated 1019 cm-3 doped n-type Si(100) substrates shows a 30% reduction as compared with control samples. Accordingly, the extracted contact resistance decreases by about one order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 125%-2900% reduction in contact resistivity is achieved by Se passivation on highly-doped n-type SOI substrates with 500 Å un-doped Si buffer layer. The reduction in contact resistance is attributed to the minimization of interface states between Ti and Si(100) surface. Copyright The Electrochemical Society.