Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film

H. Fathollahnejad; R. Rajesh; Jingyue Liu; R. Droopad; G. N. Maracas; Ray Carpenter

doi:10.1007/BF02659724

Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film

H. Fathollahnejad, R. Rajesh, Jingyue Liu, R. Droopad, G. N. Maracas, Ray Carpenter

Research output: Contribution to journal › Article

4 Scopus citations

Abstract

A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10^-5 Ω-cm₂ which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.

Original language	English (US)
Pages (from-to)	35-38
Number of pages	4
Journal	Journal of Electronic Materials
Volume	24
Issue number	1
DOIs	https://doi.org/10.1007/BF02659724
State	Published - Jan 1 1995

Keywords

Epitaxial lift-off (ELO) method
Pd/Ge ohmic contacts
n-type GaAs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Fathollahnejad, H., Rajesh, R., Liu, J., Droopad, R., Maracas, G. N., & Carpenter, R. (1995). Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film. Journal of Electronic Materials, 24(1), 35-38. https://doi.org/10.1007/BF02659724

@article{ae47fb2cefc1454fad18a4a5dd6c5f32,

title = "Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film",

abstract = "A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.",

keywords = "Epitaxial lift-off (ELO) method, Pd/Ge ohmic contacts, n-type GaAs",

author = "H. Fathollahnejad and R. Rajesh and Jingyue Liu and R. Droopad and Maracas, {G. N.} and Ray Carpenter",

year = "1995",

month = jan,

day = "1",

doi = "10.1007/BF02659724",

language = "English (US)",

volume = "24",

pages = "35--38",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film

AU - Fathollahnejad, H.

AU - Rajesh, R.

AU - Liu, Jingyue

AU - Droopad, R.

AU - Maracas, G. N.

AU - Carpenter, Ray

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.

AB - A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.

KW - Epitaxial lift-off (ELO) method

KW - Pd/Ge ohmic contacts

KW - n-type GaAs

UR - http://www.scopus.com/inward/record.url?scp=51249167421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51249167421&partnerID=8YFLogxK

U2 - 10.1007/BF02659724

DO - 10.1007/BF02659724

M3 - Article

AN - SCOPUS:51249167421

VL - 24

SP - 35

EP - 38

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 1

ER -