Abstract
A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.
Original language | English (US) |
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Pages (from-to) | 35-38 |
Number of pages | 4 |
Journal | Journal of Electronic Materials |
Volume | 24 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 1995 |
Keywords
- Epitaxial lift-off (ELO) method
- Pd/Ge ohmic contacts
- n-type GaAs
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry