Abstract
A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 35-38 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 24 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1995 |
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Keywords
- Epitaxial lift-off (ELO) method
- n-type GaAs
- Pd/Ge ohmic contacts
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Electrical and Electronic Engineering
Cite this
Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film. / Fathollahnejad, H.; Rajesh, R.; Liu, Jingyue; Droopad, R.; Maracas, G. N.; Carpenter, Ray.
In: Journal of Electronic Materials, Vol. 24, No. 1, 01.1995, p. 35-38.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film
AU - Fathollahnejad, H.
AU - Rajesh, R.
AU - Liu, Jingyue
AU - Droopad, R.
AU - Maracas, G. N.
AU - Carpenter, Ray
PY - 1995/1
Y1 - 1995/1
N2 - A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.
AB - A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.
KW - Epitaxial lift-off (ELO) method
KW - n-type GaAs
KW - Pd/Ge ohmic contacts
UR - http://www.scopus.com/inward/record.url?scp=51249167421&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51249167421&partnerID=8YFLogxK
U2 - 10.1007/BF02659724
DO - 10.1007/BF02659724
M3 - Article
VL - 24
SP - 35
EP - 38
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 1
ER -