Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film

H. Fathollahnejad, R. Rajesh, Jingyue Liu, R. Droopad, G. N. Maracas, Ray Carpenter

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.

Original languageEnglish (US)
Pages (from-to)35-38
Number of pages4
JournalJournal of Electronic Materials
Volume24
Issue number1
DOIs
StatePublished - Jan 1 1995

Keywords

  • Epitaxial lift-off (ELO) method
  • Pd/Ge ohmic contacts
  • n-type GaAs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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