Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film

H. Fathollahnejad, R. Rajesh, Jingyue Liu, R. Droopad, G. N. Maracas, Ray Carpenter

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A low resistance PdGe nonalloyed ohmic contact has been successfully formed to epitaxially lifted-off n-type GaAs films. The contact is made by lifting off partially metallized n-type GaAs films using the epitaxial lift-off method and bonding them to metallized Si substrates by natural intermolecular Van Der Waals forces. Low temperature sintering (200°C) of this contact results in metallurgical bonding and formation of the ohmic contact. We have measured specific contact resistances of 5 × 10-5 Ω-cm2 which is almost half the value obtained for pure Pd contacts. Germanium forms a degenerately doped heterojunction interfacial layer to GaAs. Our experimental results show that germanium diffuses to the interface and acts as a dopant layer to n-GaAs film surface. Therefore, for epitaxially lifted-off n-type GaAs films, PdGe is a low resistance ohmic metal contact to use.

Original languageEnglish (US)
Pages (from-to)35-38
Number of pages4
JournalJournal of Electronic Materials
Volume24
Issue number1
DOIs
StatePublished - Jan 1995

Fingerprint

Ohmic contacts
low resistance
electric contacts
Germanium
germanium
Van der Waals forces
Acoustic impedance
Contact resistance
contact resistance
Heterojunctions
heterojunctions
sintering
Sintering
Doping (additives)
Metals
gallium arsenide
Substrates
metals
Temperature

Keywords

  • Epitaxial lift-off (ELO) method
  • n-type GaAs
  • Pd/Ge ohmic contacts

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film. / Fathollahnejad, H.; Rajesh, R.; Liu, Jingyue; Droopad, R.; Maracas, G. N.; Carpenter, Ray.

In: Journal of Electronic Materials, Vol. 24, No. 1, 01.1995, p. 35-38.

Research output: Contribution to journalArticle

Fathollahnejad, H. ; Rajesh, R. ; Liu, Jingyue ; Droopad, R. ; Maracas, G. N. ; Carpenter, Ray. / Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film. In: Journal of Electronic Materials. 1995 ; Vol. 24, No. 1. pp. 35-38.
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