Low-power TiN/Al2O3/Pt resistive switching device with sub-20 A switching current and gradual resistance modulation

Yi Wu, Shimeng Yu, Byoungil Lee, Philip Wong

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

Resistive-switching random access memory (RRAM) using the TiN/AlO x/Pt stack is fabricated with a 50 nm × 50 nm active area. The bipolar switching characteristic is observed using TiN as an anode and RESET current as low as sub-20 μA was achieved by using a current-limiting transistor as a selection device (1T1R) during the SET process. HRS to LRS ratio of 103 for 103 DC endurance test cycles is demonstrated. Switching time less than 10 ns was observed for both SET/RESET operations. By changing the gate bias of the series transistor and input voltage at the transistor drain terminal, multi-level resistance states can be modulated. Both the unipolar and bipolar resistance switching can coexist in such memory stacks and a qualitative model is proposed for the AlOx-based RRAM resistive switching behavior.

Original languageEnglish (US)
Article number094104
JournalJournal of Applied Physics
Volume110
Issue number9
DOIs
StatePublished - Nov 1 2011
Externally publishedYes

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modulation
transistors
random access memory
endurance
anodes
direct current
cycles
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Low-power TiN/Al2O3/Pt resistive switching device with sub-20 A switching current and gradual resistance modulation. / Wu, Yi; Yu, Shimeng; Lee, Byoungil; Wong, Philip.

In: Journal of Applied Physics, Vol. 110, No. 9, 094104, 01.11.2011.

Research output: Contribution to journalArticle

@article{968b9b73d68b47548f8b95fee47ae4f7,
title = "Low-power TiN/Al2O3/Pt resistive switching device with sub-20 A switching current and gradual resistance modulation",
abstract = "Resistive-switching random access memory (RRAM) using the TiN/AlO x/Pt stack is fabricated with a 50 nm × 50 nm active area. The bipolar switching characteristic is observed using TiN as an anode and RESET current as low as sub-20 μA was achieved by using a current-limiting transistor as a selection device (1T1R) during the SET process. HRS to LRS ratio of 103 for 103 DC endurance test cycles is demonstrated. Switching time less than 10 ns was observed for both SET/RESET operations. By changing the gate bias of the series transistor and input voltage at the transistor drain terminal, multi-level resistance states can be modulated. Both the unipolar and bipolar resistance switching can coexist in such memory stacks and a qualitative model is proposed for the AlOx-based RRAM resistive switching behavior.",
author = "Yi Wu and Shimeng Yu and Byoungil Lee and Philip Wong",
year = "2011",
month = "11",
day = "1",
doi = "10.1063/1.3657938",
language = "English (US)",
volume = "110",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Low-power TiN/Al2O3/Pt resistive switching device with sub-20 A switching current and gradual resistance modulation

AU - Wu, Yi

AU - Yu, Shimeng

AU - Lee, Byoungil

AU - Wong, Philip

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Resistive-switching random access memory (RRAM) using the TiN/AlO x/Pt stack is fabricated with a 50 nm × 50 nm active area. The bipolar switching characteristic is observed using TiN as an anode and RESET current as low as sub-20 μA was achieved by using a current-limiting transistor as a selection device (1T1R) during the SET process. HRS to LRS ratio of 103 for 103 DC endurance test cycles is demonstrated. Switching time less than 10 ns was observed for both SET/RESET operations. By changing the gate bias of the series transistor and input voltage at the transistor drain terminal, multi-level resistance states can be modulated. Both the unipolar and bipolar resistance switching can coexist in such memory stacks and a qualitative model is proposed for the AlOx-based RRAM resistive switching behavior.

AB - Resistive-switching random access memory (RRAM) using the TiN/AlO x/Pt stack is fabricated with a 50 nm × 50 nm active area. The bipolar switching characteristic is observed using TiN as an anode and RESET current as low as sub-20 μA was achieved by using a current-limiting transistor as a selection device (1T1R) during the SET process. HRS to LRS ratio of 103 for 103 DC endurance test cycles is demonstrated. Switching time less than 10 ns was observed for both SET/RESET operations. By changing the gate bias of the series transistor and input voltage at the transistor drain terminal, multi-level resistance states can be modulated. Both the unipolar and bipolar resistance switching can coexist in such memory stacks and a qualitative model is proposed for the AlOx-based RRAM resistive switching behavior.

UR - http://www.scopus.com/inward/record.url?scp=81355132314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81355132314&partnerID=8YFLogxK

U2 - 10.1063/1.3657938

DO - 10.1063/1.3657938

M3 - Article

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 094104

ER -