Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers

Ramya Yeluri, Jing Lu, David Browne, Christophe A. Hurni, Srabanti Chowdhury, Stacia Keller, James S. Speck, Umesh K. Mishra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Current Aperture Vertical Electron Transistors (CAVETs) benefit from the high electron mobility of the 2-dimensional electron gas (2-DEG) in the lateral direction and the better field distribution of the vertical geometry. Current flows laterally in the 2-DEG at the AlGaN/GaN heterojunction and is directed vertically down to the drain, through the aperture (Fig.1). A current blocking layer (CBL) is used to define the low resistance aperture. In this work, we use conductive Mg-doped MOCVD p-GaN as the CBL, hence blocking the current flow by the use of a reverse biased p-n junction as opposed to using insulating layers[1,2].

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages253-254
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period6/22/146/25/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Yeluri, R., Lu, J., Browne, D., Hurni, C. A., Chowdhury, S., Keller, S., Speck, J. S., & Mishra, U. K. (2014). Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 253-254). [6872393] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872393