Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers

Ramya Yeluri; Jing Lu; David Browne; Christophe A. Hurni; Srabanti Chowdhury; Stacia Keller; James S. Speck; Umesh K. Mishra

doi:10.1109/DRC.2014.6872393

Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers

Ramya Yeluri, Jing Lu, David Browne, Christophe A. Hurni, Srabanti Chowdhury, Stacia Keller, James S. Speck, Umesh K. Mishra

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Current Aperture Vertical Electron Transistors (CAVETs) benefit from the high electron mobility of the 2-dimensional electron gas (2-DEG) in the lateral direction and the better field distribution of the vertical geometry. Current flows laterally in the 2-DEG at the AlGaN/GaN heterojunction and is directed vertically down to the drain, through the aperture (Fig.1). A current blocking layer (CBL) is used to define the low resistance aperture. In this work, we use conductive Mg-doped MOCVD p-GaN as the CBL, hence blocking the current flow by the use of a reverse biased p-n junction as opposed to using insulating layers[1,2].

Original language	English (US)
Title of host publication	72nd Device Research Conference, DRC 2014 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	253-254
Number of pages	2
ISBN (Print)	9781479954056
DOIs	https://doi.org/10.1109/DRC.2014.6872393
State	Published - 2014
Event	72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States Duration: Jun 22 2014 → Jun 25 2014

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	72nd Device Research Conference, DRC 2014
Country/Territory	United States
City	Santa Barbara, CA
Period	6/22/14 → 6/25/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2014.6872393

Cite this

Yeluri, R., Lu, J., Browne, D., Hurni, C. A., Chowdhury, S., Keller, S., Speck, J. S., & Mishra, U. K. (2014). Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 253-254). Article 6872393 (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872393

Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers. / Yeluri, Ramya; Lu, Jing; Browne, David et al.
72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 253-254 6872393 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yeluri, R, Lu, J, Browne, D, Hurni, CA, Chowdhury, S, Keller, S, Speck, JS & Mishra, UK 2014, Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872393, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 253-254, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 6/22/14. https://doi.org/10.1109/DRC.2014.6872393

Yeluri R, Lu J, Browne D, Hurni CA, Chowdhury S, Keller S et al. Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers. In 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2014. p. 253-254. 6872393. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2014.6872393

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abstract = "Current Aperture Vertical Electron Transistors (CAVETs) benefit from the high electron mobility of the 2-dimensional electron gas (2-DEG) in the lateral direction and the better field distribution of the vertical geometry. Current flows laterally in the 2-DEG at the AlGaN/GaN heterojunction and is directed vertically down to the drain, through the aperture (Fig.1). A current blocking layer (CBL) is used to define the low resistance aperture. In this work, we use conductive Mg-doped MOCVD p-GaN as the CBL, hence blocking the current flow by the use of a reverse biased p-n junction as opposed to using insulating layers[1,2].",

author = "Ramya Yeluri and Jing Lu and David Browne and Hurni, {Christophe A.} and Srabanti Chowdhury and Stacia Keller and Speck, {James S.} and Mishra, {Umesh K.}",

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AU - Yeluri, Ramya

AU - Lu, Jing

AU - Browne, David

AU - Hurni, Christophe A.

AU - Chowdhury, Srabanti

AU - Keller, Stacia

AU - Speck, James S.

AU - Mishra, Umesh K.

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AB - Current Aperture Vertical Electron Transistors (CAVETs) benefit from the high electron mobility of the 2-dimensional electron gas (2-DEG) in the lateral direction and the better field distribution of the vertical geometry. Current flows laterally in the 2-DEG at the AlGaN/GaN heterojunction and is directed vertically down to the drain, through the aperture (Fig.1). A current blocking layer (CBL) is used to define the low resistance aperture. In this work, we use conductive Mg-doped MOCVD p-GaN as the CBL, hence blocking the current flow by the use of a reverse biased p-n junction as opposed to using insulating layers[1,2].

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Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers

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