Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials

Jijun He; Ioannis Paradisanos; Tianyi Liu; Alisson R. Cadore; Junqiu Liu; Mikhail Churaev; Rui Ning Wang; Arslan S. Raja; Clément Javerzac-Galy; Philippe Roelli; Domenico De Fazio; Barbara L.T. Rosa; Sefaattin Tongay; Giancarlo Soavi; Andrea C. Ferrari; Tobias J. Kippenberg

doi:10.1021/acs.nanolett.0c04149

Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials

Jijun He, Ioannis Paradisanos, Tianyi Liu, Alisson R. Cadore, Junqiu Liu, Mikhail Churaev, Rui Ning Wang, Arslan S. Raja, Clément Javerzac-Galy, Philippe Roelli, Domenico De Fazio, Barbara L.T. Rosa, Sefaattin Tongay, Giancarlo Soavi, Andrea C. Ferrari, Tobias J. Kippenberg

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.

Original language	English (US)
Pages (from-to)	2709-2718
Number of pages	10
Journal	Nano Letters
Volume	21
Issue number	7
DOIs	https://doi.org/10.1021/acs.nanolett.0c04149
State	Published - Apr 14 2021

Keywords

MoTe
layered materials
microresonators
photonic integrated circuits
silicon nitride
transition-metal dichalcogenides

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.0c04149

Cite this

He, J., Paradisanos, I., Liu, T., Cadore, A. R., Liu, J., Churaev, M., Wang, R. N., Raja, A. S., Javerzac-Galy, C., Roelli, P., Fazio, D. D., Rosa, B. L. T., Tongay, S., Soavi, G., Ferrari, A. C., & Kippenberg, T. J. (2021). Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials. Nano Letters, 21(7), 2709-2718. https://doi.org/10.1021/acs.nanolett.0c04149

@article{7fe9c9fa29de45bfbf5c31effa1729e1,

title = "Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials",

abstract = "Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.",

keywords = "MoTe, layered materials, microresonators, photonic integrated circuits, silicon nitride, transition-metal dichalcogenides",

author = "Jijun He and Ioannis Paradisanos and Tianyi Liu and Cadore, {Alisson R.} and Junqiu Liu and Mikhail Churaev and Wang, {Rui Ning} and Raja, {Arslan S.} and Cl{\'e}ment Javerzac-Galy and Philippe Roelli and Fazio, {Domenico De} and Rosa, {Barbara L.T.} and Sefaattin Tongay and Giancarlo Soavi and Ferrari, {Andrea C.} and Kippenberg, {Tobias J.}",

note = "Funding Information: We thank Maxim Karpov for the discussion. We acknowledge funding from the European Union Graphene and Quantum Flagships, ERC Grants Hetero2D and GSYNCOR, EPSRC Grants EP/L016087/1, EP/N010345/1, EP/K017144/1, EP/K01711X/1, and the Swiss National Science Foundation under grant agreement No. 176563 (BRIDGE). Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",

year = "2021",

month = apr,

day = "14",

doi = "10.1021/acs.nanolett.0c04149",

language = "English (US)",

volume = "21",

pages = "2709--2718",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials

AU - He, Jijun

AU - Paradisanos, Ioannis

AU - Liu, Tianyi

AU - Cadore, Alisson R.

AU - Liu, Junqiu

AU - Churaev, Mikhail

AU - Wang, Rui Ning

AU - Raja, Arslan S.

AU - Javerzac-Galy, Clément

AU - Roelli, Philippe

AU - Fazio, Domenico De

AU - Rosa, Barbara L.T.

AU - Tongay, Sefaattin

AU - Soavi, Giancarlo

AU - Ferrari, Andrea C.

AU - Kippenberg, Tobias J.

N1 - Funding Information: We thank Maxim Karpov for the discussion. We acknowledge funding from the European Union Graphene and Quantum Flagships, ERC Grants Hetero2D and GSYNCOR, EPSRC Grants EP/L016087/1, EP/N010345/1, EP/K017144/1, EP/K01711X/1, and the Swiss National Science Foundation under grant agreement No. 176563 (BRIDGE). Publisher Copyright: © 2021 American Chemical Society.

PY - 2021/4/14

Y1 - 2021/4/14

N2 - Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.

AB - Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.

KW - MoTe

KW - layered materials

KW - microresonators

KW - photonic integrated circuits

KW - silicon nitride

KW - transition-metal dichalcogenides

UR - http://www.scopus.com/inward/record.url?scp=85104275535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85104275535&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.0c04149

DO - 10.1021/acs.nanolett.0c04149

M3 - Article

C2 - 33754742

AN - SCOPUS:85104275535

SN - 1530-6984

VL - 21

SP - 2709

EP - 2718

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials

Abstract

Keywords

ASJC Scopus subject areas

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