Abstract
We investigate the characteristics of low-frequency oscillations in semi-insulating GaAs as a function of bias voltage. We find a change in character from simple periodic to irregular, chaotic behavior. A theoretical model is outlined which emphasizes the role of diffusion. The oscillations in SI GaAs are compared to similar phenomena in other semiconductors. A universality of behavior among the various materials is observed and explained.
Original language | English (US) |
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Pages (from-to) | 276-280 |
Number of pages | 5 |
Journal | Physica B+C |
Volume | 134 |
Issue number | 1-3 |
DOIs | |
State | Published - Nov 1985 |
ASJC Scopus subject areas
- General Engineering