Abstract

Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine 1/f the noise characteristics of SOI wafers prior to circuit fabrication.

Original languageEnglish (US)
Pages (from-to)3378-3382
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume54
Issue number12
DOIs
StatePublished - Dec 2007

Fingerprint

Silicon
implantation
insulators
Spectroscopy
wafers
Oxygen
low frequencies
silicon
oxygen
spectroscopy
Power spectrum
Metals
Fabrication
noise spectra
Electrodes
Networks (circuits)
power spectra
field effect transistors
traps
fabrication

Keywords

  • Buried-oxide (BOX) traps
  • Low-frequency noise (LFN)
  • MOSFET
  • Pseudo-MOSFET
  • Silicon-on-insulator
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Low-frequency-noise spectroscopy of SIMOX and bonded SOI wafers. / Kushner, Vadim A.; Park, Kihoon; Schroder, Dieter K.; Thornton, Trevor.

In: IEEE Transactions on Electron Devices, Vol. 54, No. 12, 12.2007, p. 3378-3382.

Research output: Contribution to journalArticle

Kushner, Vadim A. ; Park, Kihoon ; Schroder, Dieter K. ; Thornton, Trevor. / Low-frequency-noise spectroscopy of SIMOX and bonded SOI wafers. In: IEEE Transactions on Electron Devices. 2007 ; Vol. 54, No. 12. pp. 3378-3382.
@article{4630f57aacc24de7a6bf4b91b9b29b1e,
title = "Low-frequency-noise spectroscopy of SIMOX and bonded SOI wafers",
abstract = "Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine 1/f the noise characteristics of SOI wafers prior to circuit fabrication.",
keywords = "Buried-oxide (BOX) traps, Low-frequency noise (LFN), MOSFET, Pseudo-MOSFET, Silicon-on-insulator, Silicon-on-insulator (SOI)",
author = "Kushner, {Vadim A.} and Kihoon Park and Schroder, {Dieter K.} and Trevor Thornton",
year = "2007",
month = "12",
doi = "10.1109/TED.2007.908894",
language = "English (US)",
volume = "54",
pages = "3378--3382",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Low-frequency-noise spectroscopy of SIMOX and bonded SOI wafers

AU - Kushner, Vadim A.

AU - Park, Kihoon

AU - Schroder, Dieter K.

AU - Thornton, Trevor

PY - 2007/12

Y1 - 2007/12

N2 - Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine 1/f the noise characteristics of SOI wafers prior to circuit fabrication.

AB - Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine 1/f the noise characteristics of SOI wafers prior to circuit fabrication.

KW - Buried-oxide (BOX) traps

KW - Low-frequency noise (LFN)

KW - MOSFET

KW - Pseudo-MOSFET

KW - Silicon-on-insulator

KW - Silicon-on-insulator (SOI)

UR - http://www.scopus.com/inward/record.url?scp=36849020440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36849020440&partnerID=8YFLogxK

U2 - 10.1109/TED.2007.908894

DO - 10.1109/TED.2007.908894

M3 - Article

AN - SCOPUS:36849020440

VL - 54

SP - 3378

EP - 3382

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -