Abstract

Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine 1/f the noise characteristics of SOI wafers prior to circuit fabrication.

Original languageEnglish (US)
Pages (from-to)3378-3382
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume54
Issue number12
DOIs
StatePublished - Dec 1 2007

    Fingerprint

Keywords

  • Buried-oxide (BOX) traps
  • Low-frequency noise (LFN)
  • MOSFET
  • Pseudo-MOSFET
  • Silicon-on-insulator
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this