Low-frequency-noise spectroscopy of SIMOX and bonded SOI wafers

Vadim A. Kushner; Kihoon Park; Dieter K. Schroder; Trevor Thornton

doi:10.1109/TED.2007.908894

Low-frequency-noise spectroscopy of SIMOX and bonded SOI wafers

Vadim A. Kushner, Kihoon Park, Dieter K. Schroder, Trevor Thornton

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine 1/f the noise characteristics of SOI wafers prior to circuit fabrication.

Original language	English (US)
Pages (from-to)	3378-3382
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	12
DOIs	https://doi.org/10.1109/TED.2007.908894
State	Published - Dec 2007

Keywords

Buried-oxide (BOX) traps
Low-frequency noise (LFN)
MOSFET
Pseudo-MOSFET
Silicon-on-insulator
Silicon-on-insulator (SOI)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2007.908894

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title = "Low-frequency-noise spectroscopy of SIMOX and bonded SOI wafers",

abstract = "Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine 1/f the noise characteristics of SOI wafers prior to circuit fabrication.",

keywords = "Buried-oxide (BOX) traps, Low-frequency noise (LFN), MOSFET, Pseudo-MOSFET, Silicon-on-insulator, Silicon-on-insulator (SOI)",

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year = "2007",

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language = "English (US)",

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AU - Kushner, Vadim A.

AU - Park, Kihoon

AU - Schroder, Dieter K.

AU - Thornton, Trevor

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AB - Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine 1/f the noise characteristics of SOI wafers prior to circuit fabrication.

KW - Buried-oxide (BOX) traps

KW - Low-frequency noise (LFN)

KW - MOSFET

KW - Pseudo-MOSFET

KW - Silicon-on-insulator

KW - Silicon-on-insulator (SOI)

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Low-frequency-noise spectroscopy of SIMOX and bonded SOI wafers

Abstract

Keywords

ASJC Scopus subject areas

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