Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces

L. J. Brillson, A. P. Young, G. H. Jessen, T. M. Levin, S. T. Bradley, S. H. Goss, J. Bae, Fernando Ponce, M. J. Murphy, W. J. Schaff, L. F. Eastman

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We have used low energy electron-excited nano-luminescence (LEEN) spectroscopy to obtain electronic band gap, confined state, and deep level trap information from GaN surfaces and buried interfaces on a nanometer scale. This local spectroscopy provides information available only indirectly by other electronic techniques. Using LEEN in combination with other surface science methods, we have probed the localized electronic states at GaN free surfaces, metal-GaN contacts, GaN/InGaN quantum wells, AlGaN/GaN pseudomorphic heterostructures, and GaN/sapphire template layers. Their properties are sensitive to the interface chemical composition, bonding, and atomic structure and in turn to the specifics of the epitaxial growth. The results highlight new methods for understanding and controlling electronic properties of GaN interfaces and their future applications.

Original languageEnglish (US)
Pages (from-to)442-449
Number of pages8
JournalApplied Surface Science
Volume175-176
DOIs
StatePublished - May 15 2001

Keywords

  • Defects
  • GaN
  • Heterojunctions
  • Luminescence spectroscopy
  • Semiconductor interfaces

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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