Abstract
Synthesis of a guest-free clathrate form of crystalline silicon was achieved by successive vacuum treatment and density separation of NaxSi136-based materials. The new allotrope of silicon has an open framework structure based upon slightly distorted tetrahedral atoms bound into five- and six-membered ring structures, and corresponds to a fully saturated and condensed fullerane-type solid. Theoretical calculations indicate that the new form of silicon should be a wide bandgap semiconductor. This prediction is borne out by experiment: electrical conductivity and optical absorption measurements yield a band gap of 1.9 eV, approximately twice the value of "normal" semiconducting silicon.
Original language | English (US) |
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Pages (from-to) | R7707-R7710 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 62 |
Issue number | 12 |
DOIs | |
State | Published - Sep 15 2000 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics