Abstract
Synthesis of a guest-free clathrate form of crystalline silicon was achieved by successive vacuum treatment and density separation of NaxSi136-based materials. The new allotrope of silicon has an open framework structure based upon slightly distorted tetrahedral atoms bound into five- and six-membered ring structures, and corresponds to a fully saturated and condensed fullerane-type solid. Theoretical calculations indicate that the new form of silicon should be a wide bandgap semiconductor. This prediction is borne out by experiment: electrical conductivity and optical absorption measurements yield a band gap of 1.9 eV, approximately twice the value of "normal" semiconducting silicon.
| Original language | English (US) |
|---|---|
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 62 |
| Issue number | 12 |
| DOIs | |
| State | Published - Sep 15 2000 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Low-density framework form of crystalline silicon with a wide optical band gap. / Gryko, J.; McMillan, P. F.; Marzke, R. F.; Ramachandran, G. K.; Patton, D.; Deb, S. K.; Sankey, O. F.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 12, 15.09.2000.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-density framework form of crystalline silicon with a wide optical band gap
AU - Gryko, J.
AU - McMillan, P. F.
AU - Marzke, R. F.
AU - Ramachandran, G. K.
AU - Patton, D.
AU - Deb, S. K.
AU - Sankey, O. F.
PY - 2000/9/15
Y1 - 2000/9/15
N2 - Synthesis of a guest-free clathrate form of crystalline silicon was achieved by successive vacuum treatment and density separation of NaxSi136-based materials. The new allotrope of silicon has an open framework structure based upon slightly distorted tetrahedral atoms bound into five- and six-membered ring structures, and corresponds to a fully saturated and condensed fullerane-type solid. Theoretical calculations indicate that the new form of silicon should be a wide bandgap semiconductor. This prediction is borne out by experiment: electrical conductivity and optical absorption measurements yield a band gap of 1.9 eV, approximately twice the value of "normal" semiconducting silicon.
AB - Synthesis of a guest-free clathrate form of crystalline silicon was achieved by successive vacuum treatment and density separation of NaxSi136-based materials. The new allotrope of silicon has an open framework structure based upon slightly distorted tetrahedral atoms bound into five- and six-membered ring structures, and corresponds to a fully saturated and condensed fullerane-type solid. Theoretical calculations indicate that the new form of silicon should be a wide bandgap semiconductor. This prediction is borne out by experiment: electrical conductivity and optical absorption measurements yield a band gap of 1.9 eV, approximately twice the value of "normal" semiconducting silicon.
UR - http://www.scopus.com/inward/record.url?scp=0034664569&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034664569&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.62.R7707
DO - 10.1103/PhysRevB.62.R7707
M3 - Article
AN - SCOPUS:0034664569
VL - 62
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 12
ER -