TY - GEN
T1 - Low-cost spray deposited ZrO2 for passivation and antireflection on p-type Si
AU - Shin, Woo Jung
AU - Wang, Laidong
AU - Tao, Meng
N1 - Funding Information:
Authors thank Wayne Paulson (Arizona State University NanoFab) for discussions and technical assistance on C-V measurements. Financial support for this project is provided in part by the U.S. National Science Foundation under grant no. DMR-1306542.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - In this study, we use low-cost spray deposition to study the possibility of using an earth-abundant ZrO2 film as a antireflection and passivation layer on p-type Si. Structural, optical and electrical properties of the spray-deposited ZrO2 film were investigated. Spray deposited ZrO2 is highly transparent with a refractive index of 2 at 600 nm wavelength. Reflectance and transmittance spectra of ZrO2 films reveal that the optical properties of spray-deposited ZrO2 are comparable to, and in some cases slightly better than, PECVD SiNx. Capacitance- voltage measurements show that spray-deposited ZrO2 films have negative charges with a charge density of 1.07×1012 cm-2. These results suggest that spray-deposited ZrO2 could be a suitable material for antireflection and passivation on p-type Si in Si solar cells.
AB - In this study, we use low-cost spray deposition to study the possibility of using an earth-abundant ZrO2 film as a antireflection and passivation layer on p-type Si. Structural, optical and electrical properties of the spray-deposited ZrO2 film were investigated. Spray deposited ZrO2 is highly transparent with a refractive index of 2 at 600 nm wavelength. Reflectance and transmittance spectra of ZrO2 films reveal that the optical properties of spray-deposited ZrO2 are comparable to, and in some cases slightly better than, PECVD SiNx. Capacitance- voltage measurements show that spray-deposited ZrO2 films have negative charges with a charge density of 1.07×1012 cm-2. These results suggest that spray-deposited ZrO2 could be a suitable material for antireflection and passivation on p-type Si in Si solar cells.
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U2 - 10.1109/PVSC.2017.8366703
DO - 10.1109/PVSC.2017.8366703
M3 - Conference contribution
AN - SCOPUS:85048515699
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 3435
EP - 3438
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -