Loss comparison of Si- and SiC-based modular multilevel converter for medium/high-voltage applications

Liyao Wu, Jiangchao Qin, Maryam Saeedifard, Oleg Wasynczuk, Krishna Shenai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

One of the main concerns in the operation of the modular multilevel converter (MMC), particularly for high-power applications, is its efficiency. SiC-based devices have the potential to provide significant efficiency improvement compared to Si devices. However, the possibility and benefits of using SiC-based devices instead of Si devices for high-power conversion have not been thoroughly explored. This paper reports on the results obtained from a detailed study to evaluate the performance of MMCs based on medium-voltage SiC MOSFETs and diodes with hybrid MMCs that employ Si IGBTs and SiC diodes. The results are based on detailed circuit simulations that use physics-based circuit models.

Original languageEnglish (US)
Title of host publicationAPEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages311-316
Number of pages6
EditionMay
ISBN (Electronic)9781479967353
DOIs
StatePublished - May 8 2015
Event30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015 - Charlotte, United States
Duration: Mar 15 2015Mar 19 2015

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
NumberMay
Volume2015-May

Other

Other30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015
Country/TerritoryUnited States
CityCharlotte
Period3/15/153/19/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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