Loss comparison of Si- and SiC-based modular multilevel converter for medium/high-voltage applications

Liyao Wu, Jiangchao Qin, Maryam Saeedifard, Oleg Wasynczuk, Krishna Shenai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

One of the main concerns in the operation of the modular multilevel converter (MMC), particularly for high-power applications, is its efficiency. SiC-based devices have the potential to provide significant efficiency improvement compared to Si devices. However, the possibility and benefits of using SiC-based devices instead of Si devices for high-power conversion have not been thoroughly explored. This paper reports on the results obtained from a detailed study to evaluate the performance of MMCs based on medium-voltage SiC MOSFETs and diodes with hybrid MMCs that employ Si IGBTs and SiC diodes. The results are based on detailed circuit simulations that use physics-based circuit models.

Original languageEnglish (US)
Title of host publicationConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages311-316
Number of pages6
Volume2015-May
EditionMay
DOIs
StatePublished - May 8 2015
Externally publishedYes
Event30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015 - Charlotte, United States
Duration: Mar 15 2015Mar 19 2015

Other

Other30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015
CountryUnited States
CityCharlotte
Period3/15/153/19/15

Fingerprint

Diodes
Circuit simulation
Insulated gate bipolar transistors (IGBT)
Electric potential
Physics
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wu, L., Qin, J., Saeedifard, M., Wasynczuk, O., & Shenai, K. (2015). Loss comparison of Si- and SiC-based modular multilevel converter for medium/high-voltage applications. In Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC (May ed., Vol. 2015-May, pp. 311-316). [7104368] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2015.7104368

Loss comparison of Si- and SiC-based modular multilevel converter for medium/high-voltage applications. / Wu, Liyao; Qin, Jiangchao; Saeedifard, Maryam; Wasynczuk, Oleg; Shenai, Krishna.

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC. Vol. 2015-May May. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 311-316 7104368.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wu, L, Qin, J, Saeedifard, M, Wasynczuk, O & Shenai, K 2015, Loss comparison of Si- and SiC-based modular multilevel converter for medium/high-voltage applications. in Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC. May edn, vol. 2015-May, 7104368, Institute of Electrical and Electronics Engineers Inc., pp. 311-316, 30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015, Charlotte, United States, 3/15/15. https://doi.org/10.1109/APEC.2015.7104368
Wu L, Qin J, Saeedifard M, Wasynczuk O, Shenai K. Loss comparison of Si- and SiC-based modular multilevel converter for medium/high-voltage applications. In Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC. May ed. Vol. 2015-May. Institute of Electrical and Electronics Engineers Inc. 2015. p. 311-316. 7104368 https://doi.org/10.1109/APEC.2015.7104368
Wu, Liyao ; Qin, Jiangchao ; Saeedifard, Maryam ; Wasynczuk, Oleg ; Shenai, Krishna. / Loss comparison of Si- and SiC-based modular multilevel converter for medium/high-voltage applications. Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC. Vol. 2015-May May. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 311-316
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