Loss Characterization and Analysis of High Voltage E-mode GaN HEMT in Soft-switching Application

Nikhil Korada, Ziwei Yu, Raja Ayyanar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Application of wide band gap (WBG) devices are getting a sharp rise in the recent power electronics sector, due to their superior performance when compared to silicon. Even though GaN devices provide a promising efficiency and power density numbers, but high frequency operation limits these benefits. This leaves behind a space for the realization of high frequency based soft switching topologies, which in combination with the GaN makes the converter size smaller and simultaneously efficient. In this unique combination, an accurate design and analysis to estimate the overall losses of the converter is necessary. Typical converter design process starts with the detailed loss estimation analysis, wherein the semiconductor based losses shares the major portion. Traditional analytical way of estimating the soft-switching semiconductor loss is not precise as it mainly depends on the instantaneous circuit conditions. In case of the soft-switching topology, the instantaneous switch voltage and current needs to be monitored to determine the switching loss accurately. This will result in a more realistic semiconductor loss evaluation, which will further ease in improving converter design and analysis. Hence, in this paper the soft-switching condition loss characterization and analysis involving an enhanced-mode (E-mode) GaN implemented in a conventional topology is investigated and verified.

Original languageEnglish (US)
Title of host publication2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40-44
Number of pages5
ISBN (Electronic)9781538659090
DOIs
StatePublished - Dec 7 2018
Event6th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018 - Atlanta, United States
Duration: Oct 31 2018Nov 2 2018

Other

Other6th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018
CountryUnited States
CityAtlanta
Period10/31/1811/2/18

Keywords

  • DPT
  • E-mode
  • GaN
  • Hard-switching
  • HEMT
  • Soft-switching
  • WBG

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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