Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

Shane Johnson, P. Dowd, W. Braun, U. Koelle, C. M. Ryu, M. Beaudoin, C. Z. Guo, Yong-Hang Zhang

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.

Original languageEnglish (US)
Pages (from-to)1545-1548
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
StatePublished - May 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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