Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - May 1 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering