Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

Shane Johnson, P. Dowd, W. Braun, U. Koelle, C. M. Ryu, M. Beaudoin, C. Z. Guo, Yong-Hang Zhang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.

Original languageEnglish (US)
Pages (from-to)1545-1548
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
StatePublished - May 2000

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Semiconductor quantum wells
Photoluminescence
Wavelength
Reflection high energy electron diffraction
Optoelectronic devices
Modulation
Temperature
Chemical analysis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs. / Johnson, Shane; Dowd, P.; Braun, W.; Koelle, U.; Ryu, C. M.; Beaudoin, M.; Guo, C. Z.; Zhang, Yong-Hang.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 05.2000, p. 1545-1548.

Research output: Contribution to journalArticle

@article{2dd88300e2db4d6082e4a344f5ddbbcc,
title = "Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs",
abstract = "Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.",
author = "Shane Johnson and P. Dowd and W. Braun and U. Koelle and Ryu, {C. M.} and M. Beaudoin and Guo, {C. Z.} and Yong-Hang Zhang",
year = "2000",
month = "5",
doi = "10.1116/1.591423",
language = "English (US)",
volume = "18",
pages = "1545--1548",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

AU - Johnson, Shane

AU - Dowd, P.

AU - Braun, W.

AU - Koelle, U.

AU - Ryu, C. M.

AU - Beaudoin, M.

AU - Guo, C. Z.

AU - Zhang, Yong-Hang

PY - 2000/5

Y1 - 2000/5

N2 - Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.

AB - Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.

UR - http://www.scopus.com/inward/record.url?scp=0034186865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034186865&partnerID=8YFLogxK

U2 - 10.1116/1.591423

DO - 10.1116/1.591423

M3 - Article

AN - SCOPUS:0034186865

VL - 18

SP - 1545

EP - 1548

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -