Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

P. Dowd, Shane Johnson, S. A. Feld, M. Adamcyk, S. A. Chaparro, J. Joseph, K. Hilgers, M. P. Horning, K. Shiralagi, Yong-Hang Zhang

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.

Original languageEnglish (US)
Pages (from-to)987-988
Number of pages2
JournalElectronics Letters
Volume39
Issue number13
DOIs
StatePublished - Jun 25 2003

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Dowd, P., Johnson, S., Feld, S. A., Adamcyk, M., Chaparro, S. A., Joseph, J., Hilgers, K., Horning, M. P., Shiralagi, K., & Zhang, Y-H. (2003). Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications. Electronics Letters, 39(13), 987-988. https://doi.org/10.1049/el:20030664