Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

P. Dowd, Shane Johnson, S. A. Feld, M. Adamcyk, S. A. Chaparro, J. Joseph, K. Hilgers, M. P. Horning, K. Shiralagi, Yong-Hang Zhang

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.

Original languageEnglish (US)
Pages (from-to)987-988
Number of pages2
JournalElectronics Letters
Volume39
Issue number13
DOIs
StatePublished - Jun 25 2003

Fingerprint

Surface emitting lasers
High temperature operations
Wavelength
Communication
Substrates
Specifications
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications. / Dowd, P.; Johnson, Shane; Feld, S. A.; Adamcyk, M.; Chaparro, S. A.; Joseph, J.; Hilgers, K.; Horning, M. P.; Shiralagi, K.; Zhang, Yong-Hang.

In: Electronics Letters, Vol. 39, No. 13, 25.06.2003, p. 987-988.

Research output: Contribution to journalArticle

Dowd, P, Johnson, S, Feld, SA, Adamcyk, M, Chaparro, SA, Joseph, J, Hilgers, K, Horning, MP, Shiralagi, K & Zhang, Y-H 2003, 'Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications', Electronics Letters, vol. 39, no. 13, pp. 987-988. https://doi.org/10.1049/el:20030664
Dowd, P. ; Johnson, Shane ; Feld, S. A. ; Adamcyk, M. ; Chaparro, S. A. ; Joseph, J. ; Hilgers, K. ; Horning, M. P. ; Shiralagi, K. ; Zhang, Yong-Hang. / Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications. In: Electronics Letters. 2003 ; Vol. 39, No. 13. pp. 987-988.
@article{cfc9783b1a39415d8e826b6cc5126271,
title = "Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications",
abstract = "The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.",
author = "P. Dowd and Shane Johnson and Feld, {S. A.} and M. Adamcyk and Chaparro, {S. A.} and J. Joseph and K. Hilgers and Horning, {M. P.} and K. Shiralagi and Yong-Hang Zhang",
year = "2003",
month = "6",
day = "25",
doi = "10.1049/el:20030664",
language = "English (US)",
volume = "39",
pages = "987--988",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "13",

}

TY - JOUR

T1 - Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

AU - Dowd, P.

AU - Johnson, Shane

AU - Feld, S. A.

AU - Adamcyk, M.

AU - Chaparro, S. A.

AU - Joseph, J.

AU - Hilgers, K.

AU - Horning, M. P.

AU - Shiralagi, K.

AU - Zhang, Yong-Hang

PY - 2003/6/25

Y1 - 2003/6/25

N2 - The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.

AB - The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.

UR - http://www.scopus.com/inward/record.url?scp=0038723103&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038723103&partnerID=8YFLogxK

U2 - 10.1049/el:20030664

DO - 10.1049/el:20030664

M3 - Article

VL - 39

SP - 987

EP - 988

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 13

ER -