Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

P. Dowd; Shane Johnson; S. A. Feld; M. Adamcyk; S. A. Chaparro; J. Joseph; K. Hilgers; M. P. Horning; K. Shiralagi; Yong-Hang Zhang

doi:10.1049/el:20030664

Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

P. Dowd, Shane Johnson, S. A. Feld, M. Adamcyk, S. A. Chaparro, J. Joseph, K. Hilgers, M. P. Horning, K. Shiralagi, Yong-Hang Zhang

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.

Original language	English (US)
Pages (from-to)	987-988
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	13
DOIs	https://doi.org/10.1049/el:20030664
State	Published - Jun 25 2003

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications",

abstract = "The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.",

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doi = "10.1049/el:20030664",

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T1 - Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

AU - Dowd, P.

AU - Johnson, Shane

AU - Feld, S. A.

AU - Adamcyk, M.

AU - Chaparro, S. A.

AU - Joseph, J.

AU - Hilgers, K.

AU - Horning, M. P.

AU - Shiralagi, K.

AU - Zhang, Yong-Hang

PY - 2003/6/25

Y1 - 2003/6/25

N2 - The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.

AB - The room-temperature continuous-wave (CW) electrical operation of antimonide-based long wavelength vertical-cavity surface-emitting lasers (VCSEL) on GaAs, with record powers and high temperature operation was presented. Singlemode powers of 0.3 mW at 10° C and 0.1 mW at 70° C and sidemode suppression ratios up to 42 dB were also achieved. It was observed that the optical powers were approaching the OC-48 short reach (SR) specifications, indicating the suitability of such VCSEL for communication applications.

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JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

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