Long Wavelength GaAs Based Pseudomorphic InGaPAsSb Type I active Materials

Vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3m are desirable for low cost optical telecommunication systems and data links. Realization of these devices may enable applications such as "fiber to the home", which operate over distances of only a few kilometers. Due to the potentially large market for 1.3m VCSELs, much research has been carried out to develop devices using different approaches based primarily on two substrates, InP and GaAs. The production of VCSELs emitting in the region of 1.3 to 1.55 m has been inhibited by (1) production inefficiencies, (2) small refractive index step, (3) poor thermal properties, and (4) unacceptably short device lifetimes.In order to overcome these problems, Arizona State University researchers have developed strain-compensated structures with type-I band edge alignment allowing for the growth of multiple layers with no degradation of material quality. Through the use of strained InGaAsSb/GaAs heterostructures the resultant VCSEL device provides an active region having a quantum well structure that can be used for lasers grown on GaAs substrates providing an emission wavelength of 1.3m.