Abstract
The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AlGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900 cm-1, η = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1 μm) and low dark current (ID = 10-6 Λ at 68 K and V6 = 1 V) are achieved.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 213-214 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 29 |
| Issue number | 2 |
| State | Published - Jan 1 1993 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector. / Zhang, Yong-Hang; Baruch, N.; Wang, W. I.
In: Electronics Letters, Vol. 29, No. 2, 01.01.1993, p. 213-214.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector
AU - Zhang, Yong-Hang
AU - Baruch, N.
AU - Wang, W. I.
PY - 1993/1/1
Y1 - 1993/1/1
N2 - The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AlGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900 cm-1, η = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1 μm) and low dark current (ID = 10-6 Λ at 68 K and V6 = 1 V) are achieved.
AB - The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AlGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900 cm-1, η = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1 μm) and low dark current (ID = 10-6 Λ at 68 K and V6 = 1 V) are achieved.
UR - http://www.scopus.com/inward/record.url?scp=0027147246&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027147246&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0027147246
VL - 29
SP - 213
EP - 214
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 2
ER -