Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector

Y. Zhang, N. Baruch, W. I. Wang

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AIGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900cm-1, n = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1µm) and low dark current (ID = 10-6 A at 68 K and Vb = 1 V) are achieved.

Original languageEnglish (US)
Pages (from-to)213-214
Number of pages2
JournalElectronics Letters
Volume29
Issue number2
DOIs
StatePublished - Jan 1993
Externally publishedYes

Keywords

  • Infra-red detectors
  • Photodetectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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