Abstract
The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AIGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900cm-1, n = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1µm) and low dark current (ID = 10-6 A at 68 K and Vb = 1 V) are achieved.
Original language | English (US) |
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Pages (from-to) | 213-214 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 29 |
Issue number | 2 |
DOIs | |
State | Published - Jan 1993 |
Externally published | Yes |
Keywords
- Infra-red detectors
- Photodetectors
ASJC Scopus subject areas
- Electrical and Electronic Engineering