Abstract
The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AIGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900cm-1, n = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1µm) and low dark current (ID = 10-6 A at 68 K and Vb = 1 V) are achieved.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 213-214 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 29 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 1993 |
| Externally published | Yes |
Keywords
- Infra-red detectors
- Photodetectors
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Zhang, Y., Baruch, N., & Wang, W. I. (1993). Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector. Electronics Letters, 29(2), 213-214. https://doi.org/10.1049/el:19930143