Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector

Yong-Hang Zhang, N. Baruch, W. I. Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AlGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900 cm-1, η = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1 μm) and low dark current (ID = 10-6 Λ at 68 K and V6 = 1 V) are achieved.

Original languageEnglish (US)
Pages (from-to)213-214
Number of pages2
JournalElectronics Letters
Volume29
Issue number2
StatePublished - Jan 1 1993
Externally publishedYes

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Semiconductor quantum wells
Infrared radiation
Wavelength
Dark currents
Infrared absorption
Photodetectors
Quantum efficiency

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector. / Zhang, Yong-Hang; Baruch, N.; Wang, W. I.

In: Electronics Letters, Vol. 29, No. 2, 01.01.1993, p. 213-214.

Research output: Contribution to journalArticle

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