Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector

Y. Zhang; N. Baruch; W. I. Wang

doi:10.1049/el:19930143

Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector

Y. Zhang, N. Baruch, W. I. Wang

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AIGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900cm^-1, n = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1µm) and low dark current (I_D = 10^-6 A at 68 K and V_b = 1 V) are achieved.

Original language	English (US)
Pages (from-to)	213-214
Number of pages	2
Journal	Electronics Letters
Volume	29
Issue number	2
DOIs	https://doi.org/10.1049/el:19930143
State	Published - Jan 1993
Externally published	Yes

Keywords

Infra-red detectors
Photodetectors

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19930143

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title = "Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector",

abstract = "The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AIGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900cm-1, n = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1µm) and low dark current (ID = 10-6 A at 68 K and Vb = 1 V) are achieved.",

keywords = "Infra-red detectors, Photodetectors",

author = "Y. Zhang and N. Baruch and Wang, {W. I.}",

year = "1993",

month = jan,

doi = "10.1049/el:19930143",

language = "English (US)",

volume = "29",

pages = "213--214",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector

AU - Zhang, Y.

AU - Baruch, N.

AU - Wang, W. I.

PY - 1993/1

Y1 - 1993/1

N2 - The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AIGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900cm-1, n = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1µm) and low dark current (ID = 10-6 A at 68 K and Vb = 1 V) are achieved.

AB - The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AIGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900cm-1, n = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1µm) and low dark current (ID = 10-6 A at 68 K and Vb = 1 V) are achieved.

KW - Infra-red detectors

KW - Photodetectors

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UR - http://www.scopus.com/inward/citedby.url?scp=0027147246&partnerID=8YFLogxK

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DO - 10.1049/el:19930143

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EP - 214

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -

Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector

Abstract

Keywords

ASJC Scopus subject areas

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