The Letter demonstrates a long-wavelength broadband normal incidence infra-red photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AIGaAs X-valley quantum wells. High infra-red absorption coefficient and quantum efficiency (α = 1900cm-1, n = 19%), wideband long wavelength photoresponsivity (λ = 7.8-17.1µm) and low dark current (ID = 10-6 A at 68 K and Vb = 1 V) are achieved.
- Infra-red detectors
ASJC Scopus subject areas
- Electrical and Electronic Engineering