Abstract

The room temperature photoluminescence emitted by InGaAs/GaPAsSb quantum well structures grown on GaAs are investigated. It was observed that such room temperature photoluminescence have wavelengths between 1.2 and 1.5 μm. The emission wavelengths of the photoluminescence were influenced by the composition of the quantum well structures' GaPAsSb layer. The ability of InGaAs/GaPAsSb quantum well structures to emit photoluminescence at room temperature is attributed to their spatially indirect interband transition, in which their electron and wave functions have large spatial overlap.

Original languageEnglish (US)
Pages (from-to)1267-1269
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number9
StatePublished - Aug 30 1999

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quantum wells
photoluminescence
wavelengths
room temperature
wave functions
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs. / Dowd, P.; Braun, W.; Smith, David; Ryu, C. M.; Guo, C. Z.; Chen, S. L.; Koelle, U.; Johnson, Shane; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 75, No. 9, 30.08.1999, p. 1267-1269.

Research output: Contribution to journalArticle

Dowd, P. ; Braun, W. ; Smith, David ; Ryu, C. M. ; Guo, C. Z. ; Chen, S. L. ; Koelle, U. ; Johnson, Shane ; Zhang, Yong-Hang. / Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs. In: Applied Physics Letters. 1999 ; Vol. 75, No. 9. pp. 1267-1269.
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AU - Dowd, P.

AU - Braun, W.

AU - Smith, David

AU - Ryu, C. M.

AU - Guo, C. Z.

AU - Chen, S. L.

AU - Koelle, U.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 1999/8/30

Y1 - 1999/8/30

N2 - The room temperature photoluminescence emitted by InGaAs/GaPAsSb quantum well structures grown on GaAs are investigated. It was observed that such room temperature photoluminescence have wavelengths between 1.2 and 1.5 μm. The emission wavelengths of the photoluminescence were influenced by the composition of the quantum well structures' GaPAsSb layer. The ability of InGaAs/GaPAsSb quantum well structures to emit photoluminescence at room temperature is attributed to their spatially indirect interband transition, in which their electron and wave functions have large spatial overlap.

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