Long-time tail of the autocorrelation function for electron drift in high electric fields in silicon

D. K. Ferry

doi:10.1103/PhysRevLett.45.758

Long-time tail of the autocorrelation function for electron drift in high electric fields in silicon

D. K. Ferry

Arizona State University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The velocity autocorrelation (t) function is calculated for electrons moving along a high electric field in n-type silicon. For short times t, it varies as exp(-t0), but for times greater than approximately 1.50, the short-time exponential decay appears to go over to a t-32 decay. This representation covers the initial relaxation, but a second exponential also appears as relaxation to the nonequilibrium steady state occurs.

Original language	English (US)
Pages (from-to)	758-760
Number of pages	3
Journal	Physical Review Letters
Volume	45
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.45.758
State	Published - 1980

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The velocity autocorrelation (t) function is calculated for electrons moving along a high electric field in n-type silicon. For short times t, it varies as exp(-t0), but for times greater than approximately 1.50, the short-time exponential decay appears to go over to a t-32 decay. This representation covers the initial relaxation, but a second exponential also appears as relaxation to the nonequilibrium steady state occurs.",

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AB - The velocity autocorrelation (t) function is calculated for electrons moving along a high electric field in n-type silicon. For short times t, it varies as exp(-t0), but for times greater than approximately 1.50, the short-time exponential decay appears to go over to a t-32 decay. This representation covers the initial relaxation, but a second exponential also appears as relaxation to the nonequilibrium steady state occurs.

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Long-time tail of the autocorrelation function for electron drift in high electric fields in silicon

Abstract

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