Long range order in ultra-thin SiO 2 grown on ordered Si(100)

Q. B. Hurst, N. Herbots, J. M. Shaw, M. M. Floyd, David Smith, Robert Culbertson, M. P. Grams, J. D. Bradley, P. Zimmerman, V. Atluri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we investigate the correlation of electrical properties and structure of 1-4 nm thick SiO 2 grown on H-passivated Si(100) for ultra-thin gate applications. Ordered (1×1) Si(100) stable in ambient air is obtained at room temperature by wet chemical cleaning. Ion Beam Analysis using a combination of ion channeling and 16O(α,α) 16O nuclear resonance yields Si areal densities lower than that of a bulk-terminated Si crystal as calculated by Monte-Carlo simulations. This result indicates shadowing of Si substrate atoms by Si atoms in the thermally grown oxide. Detection of order by ion channeling is supported by Reflection High Energy Electron Diffraction (RHEED). C-V and I-V measurements are generally inconclusive for ultra-thin (1-2 nm) oxides because of leakage and breakdown. Surface charge analysis enables a comparison between ordered oxides and conventional oxides. The results are promising.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages181-187
Number of pages7
Volume567
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA
Duration: Apr 5 1999Apr 8 1999

Other

OtherProceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics
CitySan Francisco, CA, USA
Period4/5/994/8/99

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hurst, Q. B., Herbots, N., Shaw, J. M., Floyd, M. M., Smith, D., Culbertson, R., Grams, M. P., Bradley, J. D., Zimmerman, P., & Atluri, V. (1999). Long range order in ultra-thin SiO 2 grown on ordered Si(100) In Materials Research Society Symposium - Proceedings (Vol. 567, pp. 181-187). Materials Research Society.