Location of adatoms on Si(100) surface using the electron channeling effect on Auger electron emission

W. Qian, John Spence, G. G. Hembree

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Described is the principle of atomic-site location by channeling enhanced microanalysis (ALCHEMI) technique. The electron intensities on crystallographic sites within unit cell oscillate with variation of the incident beam direction. The corresponding characteristics emission spectra from atoms at those atomic sites follow these oscillations if the inelastic scattering events are localized. By analyzing the spectra of the impurity species and reference atoms on known sites at various tilting angles, the location of the impurity atoms can be obtained. This paper study the possible application of this technique for locating adatom positions on a crystal surface, using the channeling effect on characteristic Auger emissions.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
PublisherPubl by San Francisco Press Inc
Pages1130-1131
Number of pages2
StatePublished - 1993
EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
Duration: Aug 1 1993Aug 6 1993

Other

OtherProceedings of the 51st Annual Meeting Microscopy Society of America
CityCincinnati, OH, USA
Period8/1/938/6/93

Fingerprint

Adatoms
Electron emission
Atoms
Electrons
Impurities
Inelastic scattering
Microanalysis
Crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Qian, W., Spence, J., & Hembree, G. G. (1993). Location of adatoms on Si(100) surface using the electron channeling effect on Auger electron emission. In Proceedings - Annual Meeting, Microscopy Society of America (pp. 1130-1131). Publ by San Francisco Press Inc.

Location of adatoms on Si(100) surface using the electron channeling effect on Auger electron emission. / Qian, W.; Spence, John; Hembree, G. G.

Proceedings - Annual Meeting, Microscopy Society of America. Publ by San Francisco Press Inc, 1993. p. 1130-1131.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Qian, W, Spence, J & Hembree, GG 1993, Location of adatoms on Si(100) surface using the electron channeling effect on Auger electron emission. in Proceedings - Annual Meeting, Microscopy Society of America. Publ by San Francisco Press Inc, pp. 1130-1131, Proceedings of the 51st Annual Meeting Microscopy Society of America, Cincinnati, OH, USA, 8/1/93.
Qian W, Spence J, Hembree GG. Location of adatoms on Si(100) surface using the electron channeling effect on Auger electron emission. In Proceedings - Annual Meeting, Microscopy Society of America. Publ by San Francisco Press Inc. 1993. p. 1130-1131
Qian, W. ; Spence, John ; Hembree, G. G. / Location of adatoms on Si(100) surface using the electron channeling effect on Auger electron emission. Proceedings - Annual Meeting, Microscopy Society of America. Publ by San Francisco Press Inc, 1993. pp. 1130-1131
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