Localized states at InGaN/GaN quantum well interfaces

L. J. Brillson, T. M. Levin, G. H. Jessen, Fernando Ponce

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy of GaN/InGaN/GaN double-heterojunction structures reveal the formation of electronic states localized near the quantum well interfaces under relatively In-rich conditions. These states are due to formation in a cubic GaN region comparable to the quantum well layer in thickness rather than the bulk native defects typically associated with growth quality. The nanoscale depth dependence of the noncontact, nondestructive LEEN technique enables detection of this competitive recombination channel within a few nanometers of the "buried" heterojunction interfaces.

Original languageEnglish (US)
Pages (from-to)3835-3837
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number24
StatePublished - Dec 13 1999

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heterojunctions
quantum wells
electron energy
luminescence
defects
electronics
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Brillson, L. J., Levin, T. M., Jessen, G. H., & Ponce, F. (1999). Localized states at InGaN/GaN quantum well interfaces. Applied Physics Letters, 75(24), 3835-3837.

Localized states at InGaN/GaN quantum well interfaces. / Brillson, L. J.; Levin, T. M.; Jessen, G. H.; Ponce, Fernando.

In: Applied Physics Letters, Vol. 75, No. 24, 13.12.1999, p. 3835-3837.

Research output: Contribution to journalArticle

Brillson, LJ, Levin, TM, Jessen, GH & Ponce, F 1999, 'Localized states at InGaN/GaN quantum well interfaces', Applied Physics Letters, vol. 75, no. 24, pp. 3835-3837.
Brillson LJ, Levin TM, Jessen GH, Ponce F. Localized states at InGaN/GaN quantum well interfaces. Applied Physics Letters. 1999 Dec 13;75(24):3835-3837.
Brillson, L. J. ; Levin, T. M. ; Jessen, G. H. ; Ponce, Fernando. / Localized states at InGaN/GaN quantum well interfaces. In: Applied Physics Letters. 1999 ; Vol. 75, No. 24. pp. 3835-3837.
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