Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

L. J. Brillson; A. P. Young; T. M. Levin; G. H. Jessen; J. Schäfer; Y. Yang; S. H. Xu; H. Cruguel; G. J. Lapeyre; Fernando Ponce; Y. Naoi; C. Tu; J. D. McKenzie; C. R. Abernathy

doi:10.1016/S0921-5107(00)00367-6

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

L. J. Brillson, A. P. Young, T. M. Levin, G. H. Jessen, J. Schäfer, Y. Yang, S. H. Xu, H. Cruguel, G. J. Lapeyre, Fernando Ponce, Y. Naoi, C. Tu, J. D. McKenzie, C. R. Abernathy

Physics

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

We have used low energy electron-excited nanoluminescence (LEEN) spectroscopy to probe the localized electronic states at GaN free surfaces, metal-GaN contacts, and GaN/InGaN quantum well interfaces. These depth-resolved measurements reveal the presence of deep electronic states near GaN interfaces whose energies and relative densities depend sensitively on the local chemical structure and growth conditions. The physical properties of these states correlate with mobility variations in thin GaN films grown by molecular beam epitaxy, Fermi level positions at Mg and Al/GaN Schottky barriers, and the appearance of new phases localized near GaN/InGaN/GaN quantum well interfaces. The growth and processing dependence of deep GaN levels highlights new methods to understand and control the fundamental electronic structure of GaN heterointerfaces.

Original language	English (US)
Pages (from-to)	218-223
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	75
Issue number	2-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00367-6
State	Published - Jun 1 2000
Event	The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China Duration: Jun 13 1999 → Jun 18 1999

Keywords

Cathodoluminescence
Deep levels
GaN
InGaN
Interface states
Quantum well

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(00)00367-6

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Brillson, L. J., Young, A. P., Levin, T. M., Jessen, G. H., Schäfer, J., Yang, Y., Xu, S. H., Cruguel, H., Lapeyre, G. J., Ponce, F., Naoi, Y., Tu, C., McKenzie, J. D., & Abernathy, C. R. (2000). Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 75(2-3), 218-223. https://doi.org/10.1016/S0921-5107(00)00367-6

Brillson, LJ, Young, AP, Levin, TM, Jessen, GH, Schäfer, J, Yang, Y, Xu, SH, Cruguel, H, Lapeyre, GJ, Ponce, F, Naoi, Y, Tu, C, McKenzie, JD & Abernathy, CR 2000, 'Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 75, no. 2-3, pp. 218-223. https://doi.org/10.1016/S0921-5107(00)00367-6

@article{2828637e33b34030a0e35b558c850875,

title = "Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces",

abstract = "We have used low energy electron-excited nanoluminescence (LEEN) spectroscopy to probe the localized electronic states at GaN free surfaces, metal-GaN contacts, and GaN/InGaN quantum well interfaces. These depth-resolved measurements reveal the presence of deep electronic states near GaN interfaces whose energies and relative densities depend sensitively on the local chemical structure and growth conditions. The physical properties of these states correlate with mobility variations in thin GaN films grown by molecular beam epitaxy, Fermi level positions at Mg and Al/GaN Schottky barriers, and the appearance of new phases localized near GaN/InGaN/GaN quantum well interfaces. The growth and processing dependence of deep GaN levels highlights new methods to understand and control the fundamental electronic structure of GaN heterointerfaces.",

keywords = "Cathodoluminescence, Deep levels, GaN, InGaN, Interface states, Quantum well",

author = "Brillson, {L. J.} and Young, {A. P.} and Levin, {T. M.} and Jessen, {G. H.} and J. Sch{\"a}fer and Y. Yang and Xu, {S. H.} and H. Cruguel and Lapeyre, {G. J.} and Fernando Ponce and Y. Naoi and C. Tu and McKenzie, {J. D.} and Abernathy, {C. R.}",

note = "Funding Information: The Ohio State University authors gratefully acknowledge support for this work by Department of Energy Grant # DE-FG0297ER45666 for the depth-dependent LEEN studies and National Science Foundation Grant # DMR-9711851 for the energy-dependent excitation calculations. We also thank Hewlett Packard Corporation for the quantum well specimens used here.; The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors ; Conference date: 13-06-1999 Through 18-06-1999",

year = "2000",

month = jun,

day = "1",

doi = "10.1016/S0921-5107(00)00367-6",

language = "English (US)",

volume = "75",

pages = "218--223",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "2-3",

}

TY - JOUR

T1 - Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

AU - Brillson, L. J.

AU - Young, A. P.

AU - Levin, T. M.

AU - Jessen, G. H.

AU - Schäfer, J.

AU - Yang, Y.

AU - Xu, S. H.

AU - Cruguel, H.

AU - Lapeyre, G. J.

AU - Ponce, Fernando

AU - Naoi, Y.

AU - Tu, C.

AU - McKenzie, J. D.

AU - Abernathy, C. R.

N1 - Funding Information: The Ohio State University authors gratefully acknowledge support for this work by Department of Energy Grant # DE-FG0297ER45666 for the depth-dependent LEEN studies and National Science Foundation Grant # DMR-9711851 for the energy-dependent excitation calculations. We also thank Hewlett Packard Corporation for the quantum well specimens used here.

PY - 2000/6/1

Y1 - 2000/6/1

N2 - We have used low energy electron-excited nanoluminescence (LEEN) spectroscopy to probe the localized electronic states at GaN free surfaces, metal-GaN contacts, and GaN/InGaN quantum well interfaces. These depth-resolved measurements reveal the presence of deep electronic states near GaN interfaces whose energies and relative densities depend sensitively on the local chemical structure and growth conditions. The physical properties of these states correlate with mobility variations in thin GaN films grown by molecular beam epitaxy, Fermi level positions at Mg and Al/GaN Schottky barriers, and the appearance of new phases localized near GaN/InGaN/GaN quantum well interfaces. The growth and processing dependence of deep GaN levels highlights new methods to understand and control the fundamental electronic structure of GaN heterointerfaces.

AB - We have used low energy electron-excited nanoluminescence (LEEN) spectroscopy to probe the localized electronic states at GaN free surfaces, metal-GaN contacts, and GaN/InGaN quantum well interfaces. These depth-resolved measurements reveal the presence of deep electronic states near GaN interfaces whose energies and relative densities depend sensitively on the local chemical structure and growth conditions. The physical properties of these states correlate with mobility variations in thin GaN films grown by molecular beam epitaxy, Fermi level positions at Mg and Al/GaN Schottky barriers, and the appearance of new phases localized near GaN/InGaN/GaN quantum well interfaces. The growth and processing dependence of deep GaN levels highlights new methods to understand and control the fundamental electronic structure of GaN heterointerfaces.

KW - Cathodoluminescence

KW - Deep levels

KW - GaN

KW - InGaN

KW - Interface states

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=33645803654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645803654&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(00)00367-6

DO - 10.1016/S0921-5107(00)00367-6

M3 - Conference article

AN - SCOPUS:33645803654

SN - 0921-5107

VL - 75

SP - 218

EP - 223

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 2-3

T2 - The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors

Y2 - 13 June 1999 through 18 June 1999

ER -

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

Abstract

Keywords

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