Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

L. J. Brillson, A. P. Young, T. M. Levin, G. H. Jessen, J. Schäfer, Y. Yang, S. H. Xu, H. Cruguel, G. J. Lapeyre, Fernando Ponce, Y. Naoi, C. Tu, J. D. McKenzie, C. R. Abernathy

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have used low energy electron-excited nanoluminescence (LEEN) spectroscopy to probe the localized electronic states at GaN free surfaces, metal-GaN contacts, and GaN/InGaN quantum well interfaces. These depth-resolved measurements reveal the presence of deep electronic states near GaN interfaces whose energies and relative densities depend sensitively on the local chemical structure and growth conditions. The physical properties of these states correlate with mobility variations in thin GaN films grown by molecular beam epitaxy, Fermi level positions at Mg and Al/GaN Schottky barriers, and the appearance of new phases localized near GaN/InGaN/GaN quantum well interfaces. The growth and processing dependence of deep GaN levels highlights new methods to understand and control the fundamental electronic structure of GaN heterointerfaces.

Original languageEnglish (US)
Pages (from-to)218-223
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume75
Issue number2-3
StatePublished - Jun 1 2000

Fingerprint

Electronic states
Semiconductor quantum wells
quantum wells
Fermi level
Molecular beam epitaxy
Electronic structure
depth measurement
Physical properties
Metals
Spectroscopy
electronics
Thin films
metal surfaces
Electrons
molecular beam epitaxy
Processing
physical properties
electron energy
electronic structure
probes

Keywords

  • Cathodoluminescence
  • Deep levels
  • GaN
  • InGaN
  • Interface states
  • Quantum well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Brillson, L. J., Young, A. P., Levin, T. M., Jessen, G. H., Schäfer, J., Yang, Y., ... Abernathy, C. R. (2000). Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 75(2-3), 218-223.

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces. / Brillson, L. J.; Young, A. P.; Levin, T. M.; Jessen, G. H.; Schäfer, J.; Yang, Y.; Xu, S. H.; Cruguel, H.; Lapeyre, G. J.; Ponce, Fernando; Naoi, Y.; Tu, C.; McKenzie, J. D.; Abernathy, C. R.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 75, No. 2-3, 01.06.2000, p. 218-223.

Research output: Contribution to journalArticle

Brillson, LJ, Young, AP, Levin, TM, Jessen, GH, Schäfer, J, Yang, Y, Xu, SH, Cruguel, H, Lapeyre, GJ, Ponce, F, Naoi, Y, Tu, C, McKenzie, JD & Abernathy, CR 2000, 'Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 75, no. 2-3, pp. 218-223.
Brillson, L. J. ; Young, A. P. ; Levin, T. M. ; Jessen, G. H. ; Schäfer, J. ; Yang, Y. ; Xu, S. H. ; Cruguel, H. ; Lapeyre, G. J. ; Ponce, Fernando ; Naoi, Y. ; Tu, C. ; McKenzie, J. D. ; Abernathy, C. R. / Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2000 ; Vol. 75, No. 2-3. pp. 218-223.
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