Localization versus field effects in single InGaN quantum wells

A. Bell, J. Christen, F. Bertram, Fernando Ponce, H. Marui, S. Tanaka

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The optical properties of InGaN quantum wells were studied using time-resolved cathodoluminescence (TRCL) spectroscopy. The rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions were used to measure the onset and decay of the relaxation and recombination kinetics. It was found that both localization in potential fluctuations and quantum confined Stark effect (QCSE) due to fields have an effect on recombination. The results show that for L z = 6 nm the localization effects are dominant, whereas for L z = 8 nm field effects are dominant.

Original languageEnglish (US)
Pages (from-to)58-60
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number1
DOIs
StatePublished - Jan 5 2004

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quantum wells
quasi-steady states
Stark effect
cathodoluminescence
pulses
excitation
optical properties
kinetics
decay
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bell, A., Christen, J., Bertram, F., Ponce, F., Marui, H., & Tanaka, S. (2004). Localization versus field effects in single InGaN quantum wells. Applied Physics Letters, 84(1), 58-60. https://doi.org/10.1063/1.1638880

Localization versus field effects in single InGaN quantum wells. / Bell, A.; Christen, J.; Bertram, F.; Ponce, Fernando; Marui, H.; Tanaka, S.

In: Applied Physics Letters, Vol. 84, No. 1, 05.01.2004, p. 58-60.

Research output: Contribution to journalArticle

Bell, A, Christen, J, Bertram, F, Ponce, F, Marui, H & Tanaka, S 2004, 'Localization versus field effects in single InGaN quantum wells', Applied Physics Letters, vol. 84, no. 1, pp. 58-60. https://doi.org/10.1063/1.1638880
Bell, A. ; Christen, J. ; Bertram, F. ; Ponce, Fernando ; Marui, H. ; Tanaka, S. / Localization versus field effects in single InGaN quantum wells. In: Applied Physics Letters. 2004 ; Vol. 84, No. 1. pp. 58-60.
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