Localization versus field effects in single InGaN quantum wells

A. Bell; J. Christen; F. Bertram; Fernando Ponce; H. Marui; S. Tanaka

doi:10.1063/1.1638880

Localization versus field effects in single InGaN quantum wells

A. Bell, J. Christen, F. Bertram, Fernando Ponce, H. Marui, S. Tanaka

Physics

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The optical properties of InGaN quantum wells were studied using time-resolved cathodoluminescence (TRCL) spectroscopy. The rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions were used to measure the onset and decay of the relaxation and recombination kinetics. It was found that both localization in potential fluctuations and quantum confined Stark effect (QCSE) due to fields have an effect on recombination. The results show that for L _z = 6 nm the localization effects are dominant, whereas for L _z = 8 nm field effects are dominant.

Original language	English (US)
Pages (from-to)	58-60
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	1
DOIs	https://doi.org/10.1063/1.1638880
State	Published - Jan 5 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{a38357301a3341929a6b4b21b55683ff,

title = "Localization versus field effects in single InGaN quantum wells",

abstract = "The optical properties of InGaN quantum wells were studied using time-resolved cathodoluminescence (TRCL) spectroscopy. The rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions were used to measure the onset and decay of the relaxation and recombination kinetics. It was found that both localization in potential fluctuations and quantum confined Stark effect (QCSE) due to fields have an effect on recombination. The results show that for L z = 6 nm the localization effects are dominant, whereas for L z = 8 nm field effects are dominant.",

author = "A. Bell and J. Christen and F. Bertram and Fernando Ponce and H. Marui and S. Tanaka",

year = "2004",

month = jan,

day = "5",

doi = "10.1063/1.1638880",

language = "English (US)",

volume = "84",

pages = "58--60",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Localization versus field effects in single InGaN quantum wells

AU - Bell, A.

AU - Christen, J.

AU - Bertram, F.

AU - Ponce, Fernando

AU - Marui, H.

AU - Tanaka, S.

PY - 2004/1/5

Y1 - 2004/1/5

N2 - The optical properties of InGaN quantum wells were studied using time-resolved cathodoluminescence (TRCL) spectroscopy. The rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions were used to measure the onset and decay of the relaxation and recombination kinetics. It was found that both localization in potential fluctuations and quantum confined Stark effect (QCSE) due to fields have an effect on recombination. The results show that for L z = 6 nm the localization effects are dominant, whereas for L z = 8 nm field effects are dominant.

AB - The optical properties of InGaN quantum wells were studied using time-resolved cathodoluminescence (TRCL) spectroscopy. The rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions were used to measure the onset and decay of the relaxation and recombination kinetics. It was found that both localization in potential fluctuations and quantum confined Stark effect (QCSE) due to fields have an effect on recombination. The results show that for L z = 6 nm the localization effects are dominant, whereas for L z = 8 nm field effects are dominant.

UR - http://www.scopus.com/inward/record.url?scp=0942299744&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0942299744&partnerID=8YFLogxK

U2 - 10.1063/1.1638880

DO - 10.1063/1.1638880

M3 - Article

AN - SCOPUS:0942299744

SN - 0003-6951

VL - 84

SP - 58

EP - 60

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Localization versus field effects in single InGaN quantum wells

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