Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study

A. Bell, J. Christen, F. Bertram, M. Stevens, Fernando Ponce, H. Marui, S. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions.

Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
Pages301-302
Number of pages2
Volume772
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

cathodoluminescence
indium
screening
quantum wells
decay

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Bell, A., Christen, J., Bertram, F., Stevens, M., Ponce, F., Marui, H., & Tanaka, S. (2005). Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. In AIP Conference Proceedings (Vol. 772, pp. 301-302) https://doi.org/10.1063/1.1994110

Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. / Bell, A.; Christen, J.; Bertram, F.; Stevens, M.; Ponce, Fernando; Marui, H.; Tanaka, S.

AIP Conference Proceedings. Vol. 772 2005. p. 301-302.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bell, A, Christen, J, Bertram, F, Stevens, M, Ponce, F, Marui, H & Tanaka, S 2005, Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. in AIP Conference Proceedings. vol. 772, pp. 301-302, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994110
Bell A, Christen J, Bertram F, Stevens M, Ponce F, Marui H et al. Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. In AIP Conference Proceedings. Vol. 772. 2005. p. 301-302 https://doi.org/10.1063/1.1994110
Bell, A. ; Christen, J. ; Bertram, F. ; Stevens, M. ; Ponce, Fernando ; Marui, H. ; Tanaka, S. / Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. AIP Conference Proceedings. Vol. 772 2005. pp. 301-302
@inproceedings{1eb9055354ec431789cbce42de7c4214,
title = "Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study",
abstract = "Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions.",
author = "A. Bell and J. Christen and F. Bertram and M. Stevens and Fernando Ponce and H. Marui and S. Tanaka",
year = "2005",
month = "6",
day = "30",
doi = "10.1063/1.1994110",
language = "English (US)",
isbn = "0735402574",
volume = "772",
pages = "301--302",
booktitle = "AIP Conference Proceedings",

}

TY - GEN

T1 - Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study

AU - Bell, A.

AU - Christen, J.

AU - Bertram, F.

AU - Stevens, M.

AU - Ponce, Fernando

AU - Marui, H.

AU - Tanaka, S.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions.

AB - Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions.

UR - http://www.scopus.com/inward/record.url?scp=33749518230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749518230&partnerID=8YFLogxK

U2 - 10.1063/1.1994110

DO - 10.1063/1.1994110

M3 - Conference contribution

AN - SCOPUS:33749518230

SN - 0735402574

SN - 9780735402577

VL - 772

SP - 301

EP - 302

BT - AIP Conference Proceedings

ER -