Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study

A. Bell, J. Christen, F. Bertram, M. Stevens, Fernando Ponce, H. Marui, S. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages301-302
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Bell, A., Christen, J., Bertram, F., Stevens, M., Ponce, F., Marui, H., & Tanaka, S. (2005). Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 301-302). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994110