Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study

A. Bell; J. Christen; F. Bertram; M. Stevens; Fernando Ponce; H. Marui; S. Tanaka

doi:10.1063/1.1994110

Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study

A. Bell, J. Christen, F. Bertram, M. Stevens, Fernando Ponce, H. Marui, S. Tanaka

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	301-302
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994110
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	7/26/04 → 7/30/04

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.1994110

Cite this

Bell, A., Christen, J., Bertram, F., Stevens, M., Ponce, F., Marui, H., & Tanaka, S. (2005). Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 301-302). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994110

Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. / Bell, A.; Christen, J.; Bertram, F. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 301-302 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bell, A, Christen, J, Bertram, F, Stevens, M, Ponce, F, Marui, H & Tanaka, S 2005, Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 301-302, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994110

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AU - Marui, H.

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Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study

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