Ti1-xZrx (0 ≤ x ≤ 0.2) films were prepared by co-deposition onto Si(111) surfaces in UHV. After in situ thermal annealing at temperatures of ∼ 600°C, the films form C49 (Ti1-xZrx)Si2 and are stable in this phase up to at least 910°C. A quantitative X-ray absorption spectroscopy analysis was performed to study the local structure of these alloy films. The structure of the C49 alloy silicide is more ordered in the perpendicular direction to the sample surface than the parallel direction. The ZrSi bond lengths are shorter compared to the ZrSi2 films.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering