Local structural studies of (Ti1-xZrx)Si2 thin films on Si(111)

Y. Dao, A. M. Edwards, R. J. Nemanich, D. E. Sayers

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Ti1-xZrx (0 ≤ x ≤ 0.2) films were prepared by co-deposition onto Si(111) surfaces in UHV. After in situ thermal annealing at temperatures of ∼ 600°C, the films form C49 (Ti1-xZrx)Si2 and are stable in this phase up to at least 910°C. A quantitative X-ray absorption spectroscopy analysis was performed to study the local structure of these alloy films. The structure of the C49 alloy silicide is more ordered in the perpendicular direction to the sample surface than the parallel direction. The ZrSi bond lengths are shorter compared to the ZrSi2 films.

Original languageEnglish (US)
Pages (from-to)513-514
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Volume208-209
Issue numberC
DOIs
StatePublished - Mar 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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