@inproceedings{73a3093227c048d3baf6f1b1bb9f5505,
title = "Linear RF polar modulated SiGe class E and F power amplifiers",
abstract = "Two fully-integrated linearized polar modulated class E and F power amplifiers (PA) with switch-mode supply modulation are presented. The PAs are implemented in a18μm SiGe BiCMOS process and can be used to transmit varying envelope RF signals operating at 870-920MHz. The class E PA gives a peak output power of 26.4dBm and a maximum efficiency of 62%. The class F PA gives peak output power of 23dBm with 53% drain efficiency. When using delta modulation to control the switch-mode supply, the class F and E polar amplifiers give ACPRs for an EDGE input waveform (at 400kHz offset) of -46dBc and - 37.7dBc respectively.",
keywords = "DC-DC power conversion, Delta modulation, Power amplifiers, Sigma-delta modulation, Switching amplifiers",
author = "Jennifer Kitchen and Ilker Deligoz and Sayfe Kiaei and Bertan Bakkaloglu",
year = "2006",
month = dec,
day = "1",
language = "English (US)",
isbn = "0780395727",
series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",
pages = "425--428",
booktitle = "2006 IEEE Radio Frequency Integrated Circuits(RFIC) Symposium - Digest of Papers",
note = "2006 IEEE Radio Frequency Integrated Circuits Symposium ; Conference date: 11-06-2006 Through 13-06-2006",
}