Limits of nano-gate fabrication

David Allee, Alec N. Broers, R. Fabian W Pease

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The authors review the limits of nanometer-scale gate electrode (nano-gate) fabrication. The technology to fabricate nano-gates has become increasingly important in recent years as the scaling limits of conventional electronic devices and the quantum effects of novel devices are investigated. Consistant with the technology used to fabricate virtually all of the smallest devices to date, the emphasis is on the resolution limits of electron beam lithography and associated ultrahigh resolution resists. Recent results of directly patterning SiO2 with nanometer-scale resolution by e-beam exposure through a sacrifical layer are also presented. Because the high resistance normally associated with nanometer-scale electrodes seriously limits the performance of high-frequency devices, various techniques to reduce the gate resistance are compared.

Original languageEnglish (US)
Pages (from-to)1093-1105
Number of pages13
JournalProceedings of the IEEE
Volume79
Issue number8
DOIs
StatePublished - Aug 1991
Externally publishedYes

Fingerprint

Fabrication
Electrodes
Electron beam lithography

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Allee, D., Broers, A. N., & Pease, R. F. W. (1991). Limits of nano-gate fabrication. Proceedings of the IEEE, 79(8), 1093-1105. https://doi.org/10.1109/5.92069

Limits of nano-gate fabrication. / Allee, David; Broers, Alec N.; Pease, R. Fabian W.

In: Proceedings of the IEEE, Vol. 79, No. 8, 08.1991, p. 1093-1105.

Research output: Contribution to journalArticle

Allee, D, Broers, AN & Pease, RFW 1991, 'Limits of nano-gate fabrication', Proceedings of the IEEE, vol. 79, no. 8, pp. 1093-1105. https://doi.org/10.1109/5.92069
Allee, David ; Broers, Alec N. ; Pease, R. Fabian W. / Limits of nano-gate fabrication. In: Proceedings of the IEEE. 1991 ; Vol. 79, No. 8. pp. 1093-1105.
@article{df51fc0cc1384e0487f281012b792350,
title = "Limits of nano-gate fabrication",
abstract = "The authors review the limits of nanometer-scale gate electrode (nano-gate) fabrication. The technology to fabricate nano-gates has become increasingly important in recent years as the scaling limits of conventional electronic devices and the quantum effects of novel devices are investigated. Consistant with the technology used to fabricate virtually all of the smallest devices to date, the emphasis is on the resolution limits of electron beam lithography and associated ultrahigh resolution resists. Recent results of directly patterning SiO2 with nanometer-scale resolution by e-beam exposure through a sacrifical layer are also presented. Because the high resistance normally associated with nanometer-scale electrodes seriously limits the performance of high-frequency devices, various techniques to reduce the gate resistance are compared.",
author = "David Allee and Broers, {Alec N.} and Pease, {R. Fabian W}",
year = "1991",
month = "8",
doi = "10.1109/5.92069",
language = "English (US)",
volume = "79",
pages = "1093--1105",
journal = "Proceedings of the IEEE",
issn = "0018-9219",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - Limits of nano-gate fabrication

AU - Allee, David

AU - Broers, Alec N.

AU - Pease, R. Fabian W

PY - 1991/8

Y1 - 1991/8

N2 - The authors review the limits of nanometer-scale gate electrode (nano-gate) fabrication. The technology to fabricate nano-gates has become increasingly important in recent years as the scaling limits of conventional electronic devices and the quantum effects of novel devices are investigated. Consistant with the technology used to fabricate virtually all of the smallest devices to date, the emphasis is on the resolution limits of electron beam lithography and associated ultrahigh resolution resists. Recent results of directly patterning SiO2 with nanometer-scale resolution by e-beam exposure through a sacrifical layer are also presented. Because the high resistance normally associated with nanometer-scale electrodes seriously limits the performance of high-frequency devices, various techniques to reduce the gate resistance are compared.

AB - The authors review the limits of nanometer-scale gate electrode (nano-gate) fabrication. The technology to fabricate nano-gates has become increasingly important in recent years as the scaling limits of conventional electronic devices and the quantum effects of novel devices are investigated. Consistant with the technology used to fabricate virtually all of the smallest devices to date, the emphasis is on the resolution limits of electron beam lithography and associated ultrahigh resolution resists. Recent results of directly patterning SiO2 with nanometer-scale resolution by e-beam exposure through a sacrifical layer are also presented. Because the high resistance normally associated with nanometer-scale electrodes seriously limits the performance of high-frequency devices, various techniques to reduce the gate resistance are compared.

UR - http://www.scopus.com/inward/record.url?scp=0026205602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026205602&partnerID=8YFLogxK

U2 - 10.1109/5.92069

DO - 10.1109/5.92069

M3 - Article

AN - SCOPUS:0026205602

VL - 79

SP - 1093

EP - 1105

JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

SN - 0018-9219

IS - 8

ER -