Abstract

The materials for multiple exciton generation (MEG) solar cells have often focused on colloidal systems using low band gap materials such as PbSe. However, detailed balacnce calculations with non-ideal quantum yield (QYs) lead to higher band gaps, with silicon close to the optimum value. We calculate the conversion efficiency of MEG processes including non-idealities for nanostructured silicon. We also boost efficiency of MEG solar cells using multijunction solar cell configurations. Incorporating MEG into multijuntion solar cells leads to increased calculated efficiencies due to QYs greater than unity in each junction. Here we have simulated the possible MEG enhanced QY of each junction and the corresponding conversion efficiencies for double junction hybrid solar cells. This hybrid structure extends the opportunities to maximize the MEG effect and also to select the appropriate effective bandgaps using silicon nanostructures.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1046-1049
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Excitons
Nanostructures
Solar cells
Silicon
Quantum yield
Energy gap
Conversion efficiency

Keywords

  • Multiple exciton generation
  • Nanostructure
  • Quantum dots
  • Silicon
  • Thermodynamic limit

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Lee, J., Goodnick, S., & Honsberg, C. (2013). Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1046-1049). [6744320] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744320

Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation. / Lee, Jongwon; Goodnick, Stephen; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 1046-1049 6744320.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, J, Goodnick, S & Honsberg, C 2013, Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744320, Institute of Electrical and Electronics Engineers Inc., pp. 1046-1049, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744320
Lee J, Goodnick S, Honsberg C. Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 1046-1049. 6744320 https://doi.org/10.1109/PVSC.2013.6744320
Lee, Jongwon ; Goodnick, Stephen ; Honsberg, Christiana. / Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 1046-1049
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