Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs

C. Lavoie, M. K. Nissen, S. Eisebitt, Shane Johnson, J. A. Mackenzie, T. Tiedje

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In-situ measurements of diffuse light scattering at λ = 457 nm are reported from the surface of GaAs films during growth by molecular beam epitaxy. Three different scattering angles are measured simultaneously corresponding to spatial frequencies in the surface roughness of q = 0.9, 12, and 17 μm-1. During growth the initial surface roughness caused by the oxide desorption decreases at high spatial frequencies and increases at low spatial frequency. The low spatial frequency roughness corresponding to scattering vectors parallel to [110] increases more rapidly during growth than for scattering parallel to [11̄0].

Original languageEnglish (US)
Title of host publicationDiagnostic Techniques for Semiconductor Materials Processing
PublisherPubl by Materials Research Society
Pages119-124
Number of pages6
Volume324
ISBN (Print)1558992235
StatePublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

Fingerprint

Molecular beam epitaxy
Light scattering
surface roughness
light scattering
molecular beam epitaxy
Surface roughness
Scattering
scattering
Film growth
Oxides
Desorption
in situ measurement
roughness
desorption
oxides
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lavoie, C., Nissen, M. K., Eisebitt, S., Johnson, S., Mackenzie, J. A., & Tiedje, T. (1994). Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs. In Diagnostic Techniques for Semiconductor Materials Processing (Vol. 324, pp. 119-124). Publ by Materials Research Society.

Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs. / Lavoie, C.; Nissen, M. K.; Eisebitt, S.; Johnson, Shane; Mackenzie, J. A.; Tiedje, T.

Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324 Publ by Materials Research Society, 1994. p. 119-124.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lavoie, C, Nissen, MK, Eisebitt, S, Johnson, S, Mackenzie, JA & Tiedje, T 1994, Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs. in Diagnostic Techniques for Semiconductor Materials Processing. vol. 324, Publ by Materials Research Society, pp. 119-124, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.
Lavoie C, Nissen MK, Eisebitt S, Johnson S, Mackenzie JA, Tiedje T. Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs. In Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324. Publ by Materials Research Society. 1994. p. 119-124
Lavoie, C. ; Nissen, M. K. ; Eisebitt, S. ; Johnson, Shane ; Mackenzie, J. A. ; Tiedje, T. / Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs. Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324 Publ by Materials Research Society, 1994. pp. 119-124
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