@inproceedings{c98988a4752e45809a93f0b0028b2329,
title = "Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs",
abstract = "In-situ measurements of diffuse light scattering at λ = 457 nm are reported from the surface of GaAs films during growth by molecular beam epitaxy. Three different scattering angles are measured simultaneously corresponding to spatial frequencies in the surface roughness of q = 0.9, 12, and 17 μm-1. During growth the initial surface roughness caused by the oxide desorption decreases at high spatial frequencies and increases at low spatial frequency. The low spatial frequency roughness corresponding to scattering vectors parallel to [110] increases more rapidly during growth than for scattering parallel to [1{\=1}0].",
author = "C. Lavoie and Nissen, {M. K.} and S. Eisebitt and Johnson, {S. R.} and Mackenzie, {J. A.} and T. Tiedje",
year = "1994",
language = "English (US)",
isbn = "1558992235",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "119--124",
booktitle = "Diagnostic Techniques for Semiconductor Materials Processing",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",
}