Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs

C. Lavoie, M. K. Nissen, S. Eisebitt, S. R. Johnson, J. A. Mackenzie, T. Tiedje

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In-situ measurements of diffuse light scattering at λ = 457 nm are reported from the surface of GaAs films during growth by molecular beam epitaxy. Three different scattering angles are measured simultaneously corresponding to spatial frequencies in the surface roughness of q = 0.9, 12, and 17 μm-1. During growth the initial surface roughness caused by the oxide desorption decreases at high spatial frequencies and increases at low spatial frequency. The low spatial frequency roughness corresponding to scattering vectors parallel to [110] increases more rapidly during growth than for scattering parallel to [11̄0].

Original languageEnglish (US)
Title of host publicationDiagnostic Techniques for Semiconductor Materials Processing
PublisherPubl by Materials Research Society
Pages119-124
Number of pages6
ISBN (Print)1558992235
StatePublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume324
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Lavoie, C., Nissen, M. K., Eisebitt, S., Johnson, S. R., Mackenzie, J. A., & Tiedje, T. (1994). Light scattering measurements of surface roughness in molecular beam epitaxy growth of GaAs. In Diagnostic Techniques for Semiconductor Materials Processing (pp. 119-124). (Materials Research Society Symposium Proceedings; Vol. 324). Publ by Materials Research Society.