Light scattering in GaAs parabolic quantum wells

J. Menéndez, A. Pinczuk, A. C. Gossard, M. G. Lamont, F. Cerdeira

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

We report the observation of electronic light scattering in photoexcited parabolic GaAsAlxGa1-xAs quantum wells. The spectra show sharp peaks corresponding to transitions between sublevels in the conduction band. The precision of the measurements allows a test of the simple harmonic oscillator model for the energy level structure. The energy gap and alloy composition of the AlxGa1-xAs layers are determined from resonance Raman scattering by optical phonons. We use these results to calculate the conduction band offset Qe. We obtain Qe ∼ 0.7, in agreement with recent experiments in square quantum wells.

Original languageEnglish (US)
Pages (from-to)601-605
Number of pages5
JournalSolid State Communications
Volume61
Issue number10
DOIs
StatePublished - Mar 1987
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Menéndez, J., Pinczuk, A., Gossard, A. C., Lamont, M. G., & Cerdeira, F. (1987). Light scattering in GaAs parabolic quantum wells. Solid State Communications, 61(10), 601-605. https://doi.org/10.1016/0038-1098(87)90369-3