Light scattering in GaAs parabolic quantum wells

J. Menéndez, A. Pinczuk, A. C. Gossard, M. G. Lamont, F. Cerdeira

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We report the observation of electronic light scattering in photoexcited parabolic GaAsAlxGa1-xAs quantum wells. The spectra show sharp peaks corresponding to transitions between sublevels in the conduction band. The precision of the measurements allows a test of the simple harmonic oscillator model for the energy level structure. The energy gap and alloy composition of the AlxGa1-xAs layers are determined from resonance Raman scattering by optical phonons. We use these results to calculate the conduction band offset Qe. We obtain Qe ∼ 0.7, in agreement with recent experiments in square quantum wells.

Original languageEnglish (US)
Pages (from-to)601-605
Number of pages5
JournalSolid State Communications
Volume61
Issue number10
DOIs
StatePublished - Mar 1987
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Light scattering in GaAs parabolic quantum wells'. Together they form a unique fingerprint.

Cite this